Effect of Al Mole Fraction on Decay Profile of Photoinduced IR Absorption and the Determination of the Critical Value of xc for AlxGa1-xAs

    Research output: Contribution to conferencePaper

    Original languageAmerican English
    Pages85-90
    Number of pages6
    StatePublished - 1992
    EventUltrafast Lasers Probe Phenomena in Semiconductors and Superconductors: SPIE (International Society for Optical Engineering) Meeting - Somerset, New Jersey
    Duration: 24 Mar 199225 Mar 1992

    Conference

    ConferenceUltrafast Lasers Probe Phenomena in Semiconductors and Superconductors: SPIE (International Society for Optical Engineering) Meeting
    CitySomerset, New Jersey
    Period24/03/9225/03/92

    NREL Publication Number

    • ACNR/CP-16304

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