Effect of Al Mole Fraction on Decay Profile of Photoinduced IR Absorption and the Determination of the Critical Value of xc for AlxGa1-xAs

Effect of Al Mole Fraction on Decay Profile of Photoinduced IR Absorption and the Determination of the Critical Value of xc for AlxGa1-xAs

NREL

Research output: Contribution to conference › Paper

Original language	American English
Pages	85-90
Number of pages	6
State	Published - 1992
Event	Ultrafast Lasers Probe Phenomena in Semiconductors and Superconductors: SPIE (International Society for Optical Engineering) Meeting - Somerset, New Jersey Duration: 24 Mar 1992 → 25 Mar 1992

Conference

Conference	Ultrafast Lasers Probe Phenomena in Semiconductors and Superconductors: SPIE (International Society for Optical Engineering) Meeting
City	Somerset, New Jersey
Period	24/03/92 → 25/03/92

NLR Publication Number

ACNR/CP-16304

Cite this

@conference{53dde368a2494eecafc67b6fe3431be1,

title = "Effect of Al Mole Fraction on Decay Profile of Photoinduced IR Absorption and the Determination of the Critical Value of xc for AlxGa1-xAs",

author = "NREL",

year = "1992",

language = "American English",

pages = "85--90",

note = "Ultrafast Lasers Probe Phenomena in Semiconductors and Superconductors: SPIE (International Society for Optical Engineering) Meeting ; Conference date: 24-03-1992 Through 25-03-1992",

}

Effect of Al Mole Fraction on Decay Profile of Photoinduced IR Absorption and the Determination of the Critical Value of xc for AlxGa1-xAs. / NREL.
1992. 85-90 Paper presented at Ultrafast Lasers Probe Phenomena in Semiconductors and Superconductors: SPIE (International Society for Optical Engineering) Meeting, Somerset, New Jersey.

Research output: Contribution to conference › Paper

TY - CONF

T1 - Effect of Al Mole Fraction on Decay Profile of Photoinduced IR Absorption and the Determination of the Critical Value of xc for AlxGa1-xAs

AU - NREL, null

PY - 1992

Y1 - 1992

M3 - Paper

SP - 85

EP - 90

T2 - Ultrafast Lasers Probe Phenomena in Semiconductors and Superconductors: SPIE (International Society for Optical Engineering) Meeting

Y2 - 24 March 1992 through 25 March 1992

ER -