Abstract
We have investigated the structural properties, optical absorption, and photoelectrochemical (PEC) responses for ZnO deposited at different temperatures by sputtering the ZnO target in pure Ar gas and mixed Ar:N2 gas ambient. We found that the presence of N2 in the growth ambient helped to promote the formation of aligned nanorods at the high substrate temperature of 500°C, resulting in significantly enhanced PEC response, as compared to ZnO films deposited in pure Ar gas ambient. Our results suggest that deposition ambient can be used to produce desired properties of thin films and aligned nanorods may help to improve PEC perforniance.
Original language | American English |
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Pages | 920-935 |
Number of pages | 16 |
State | Published - 2008 |
Event | Materials Science and Technology Conference and Exhibition, MS and T'08 - Pittsburgh, PA, United States Duration: 5 Oct 2008 → 9 Oct 2008 |
Conference
Conference | Materials Science and Technology Conference and Exhibition, MS and T'08 |
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Country/Territory | United States |
City | Pittsburgh, PA |
Period | 5/10/08 → 9/10/08 |
NREL Publication Number
- NREL/CP-520-43605
Keywords
- Bandgap
- Crystallinity
- Gas ambient
- N concentration
- Nanorod
- Photoelectrochemical
- RF power
- Sputter
- ZnO