Effect of C Impurities in a-Si:H as Measured by Drive-Level Capacitance, Photo Current, and Electron Spin Resonance

Effect of C Impurities in a-Si:H as Measured by Drive-Level Capacitance, Photo Current, and Electron Spin Resonance

Research output: Contribution to conference › Paper

Original language	American English
Pages	375-380
Number of pages	6
State	Published - 1993
Event	Amorphous Silicon Technology - 1993: Materials Research Society Symposium - San Francisco, California Duration: 13 Apr 1993 → 16 Apr 1993

Conference

Conference	Amorphous Silicon Technology - 1993: Materials Research Society Symposium
City	San Francisco, California
Period	13/04/93 → 16/04/93

Bibliographical note

Work performed by University of Oregon, Eugene, Oregon

NREL Publication Number

ACNR/CP-14389

Cite this

@conference{cc1ce62f3b104d9b909cc640b0c07c6a,

title = "Effect of C Impurities in a-Si:H as Measured by Drive-Level Capacitance, Photo Current, and Electron Spin Resonance",

author = "NREL",

note = "Work performed by University of Oregon, Eugene, Oregon; Amorphous Silicon Technology - 1993: Materials Research Society Symposium ; Conference date: 13-04-1993 Through 16-04-1993",

year = "1993",

language = "American English",

pages = "375--380",

}

TY - CONF

T1 - Effect of C Impurities in a-Si:H as Measured by Drive-Level Capacitance, Photo Current, and Electron Spin Resonance

AU - NREL, null

N1 - Work performed by University of Oregon, Eugene, Oregon

PY - 1993

Y1 - 1993

M3 - Paper

SP - 375

EP - 380

T2 - Amorphous Silicon Technology - 1993: Materials Research Society Symposium

Y2 - 13 April 1993 through 16 April 1993

ER -