Abstract
A significant photocurrent loss in CdS/CdTe solar cells is due to window-layer CdS bandgap absorption below 520 nm. This work evaluates a coordinated effort by six laboratories to optimize the CdS thickness to increase CdTe cell performance. Quantum efficiency is used to compare CdS/CdTe cell photocurrent performance for various CdS window-layer thicknesses in the range of 400 .ANG. to 2500 .ANG.The contribution to Jsc from wavelengths below 520 nm, corresponding to the CdS bandgap, shows a photocurrent difference of roughly 5 mA/cm/sup 2/ between the practical thick and thin CdS layer thicknesses, corresponding to a possible efficiency difference between 12% and 15%. Additionally, there appears to be a process dependent lower limit to the minimum CdS thickness for good-junction cells.
| Original language | American English |
|---|---|
| Pages | 853-856 |
| Number of pages | 4 |
| DOIs | |
| State | Published - 1996 |
| Event | Twenty Fifth IEEE Photovoltaic Specialists Conference - Washington, D.C. Duration: 13 May 1996 → 17 May 1996 |
Conference
| Conference | Twenty Fifth IEEE Photovoltaic Specialists Conference |
|---|---|
| City | Washington, D.C. |
| Period | 13/05/96 → 17/05/96 |
Bibliographical note
Work performed by Colorado State University, Fort Collins, Colorado and the University of Toledo, Toledo, OhioNREL Publication Number
- NREL/CP-22415