Effect of CdS Thickness on CdS/CdTe Quantum Efficiency

    Research output: Contribution to conferencePaper


    A significant photocurrent loss in CdS/CdTe solar cells is due to window-layer CdS bandgap absorption below 520 nm. This work evaluates a coordinated effort by six laboratories to optimize the CdS thickness to increase CdTe cell performance. Quantum efficiency is used to compare CdS/CdTe cell photocurrent performance for various CdS window-layer thicknesses in the range of 400 .ANG. to 2500 .ANG.The contribution to Jsc from wavelengths below 520 nm, corresponding to the CdS bandgap, shows a photocurrent difference of roughly 5 mA/cm/sup 2/ between the practical thick and thin CdS layer thicknesses, corresponding to a possible efficiency difference between 12% and 15%. Additionally, there appears to be a process dependent lower limit to the minimum CdS thickness for good-junction cells.
    Original languageAmerican English
    Number of pages4
    StatePublished - 1996
    EventTwenty Fifth IEEE Photovoltaic Specialists Conference - Washington, D.C.
    Duration: 13 May 199617 May 1996


    ConferenceTwenty Fifth IEEE Photovoltaic Specialists Conference
    CityWashington, D.C.

    Bibliographical note

    Work performed by Colorado State University, Fort Collins, Colorado and the University of Toledo, Toledo, Ohio

    NREL Publication Number

    • NREL/CP-22415


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