Effect of Contacts on Capacitance Transient Measurements in N-type Hydrogenated Amorphous Silicon

Effect of Contacts on Capacitance Transient Measurements in N-type Hydrogenated Amorphous Silicon

Research output: Contribution to conference › Paper

Original language	American English
Pages	233-238
Number of pages	6
State	Published - 1995
Event	Amorphous Silicon Technology 1995: Materials Research Society Symposium - San Francisco, California Duration: 18 Apr 1995 → 21 Apr 1995

Conference

Conference	Amorphous Silicon Technology 1995: Materials Research Society Symposium
City	San Francisco, California
Period	18/04/95 → 21/04/95

Bibliographical note

Work performed by Xerox Palo Alto Research Center, Palo Alto, California

NREL Publication Number

NREL/CP-20842

Cite this

@conference{4cd8bf808c324dacb653bfd0e415e7f2,

title = "Effect of Contacts on Capacitance Transient Measurements in N-type Hydrogenated Amorphous Silicon",

author = "NREL",

note = "Work performed by Xerox Palo Alto Research Center, Palo Alto, California; Amorphous Silicon Technology 1995: Materials Research Society Symposium ; Conference date: 18-04-1995 Through 21-04-1995",

year = "1995",

language = "American English",

pages = "233--238",

}

TY - CONF

T1 - Effect of Contacts on Capacitance Transient Measurements in N-type Hydrogenated Amorphous Silicon

AU - NREL, null

N1 - Work performed by Xerox Palo Alto Research Center, Palo Alto, California

PY - 1995

Y1 - 1995

M3 - Paper

SP - 233

EP - 238

T2 - Amorphous Silicon Technology 1995: Materials Research Society Symposium

Y2 - 18 April 1995 through 21 April 1995

ER -