Abstract
We study the effect of doping density on the performance of inverted metamorphic 1 eV GaInAs solar cells grown by dynamic hydride vapor phase epitaxy. We find that the doping efficiency of Se in this material is extremely high, with 5x1017 cm-3 being the lowest controlled value we could achieve with our present Se source. We compared rear heterojunction devices grown with intentional n-doping of 5x1017 cm-3 and unintentional n-doping of 5x1015 cm-3. The intentionally doped sample exhibited an open circuit voltage 80 mV higher than the unintentionally doped sample due to reduced dark current, and a bandgap voltage offset, or WOC, of 0.407 V. We believe that future doping optimization will improve carrier collection and WOC in these devices.
Original language | American English |
---|---|
Pages | 1100-1102 |
Number of pages | 3 |
DOIs | |
State | Published - 20 Jun 2021 |
Event | 48th IEEE Photovoltaic Specialists Conference, PVSC 2021 - Fort Lauderdale, United States Duration: 20 Jun 2021 → 25 Jun 2021 |
Conference
Conference | 48th IEEE Photovoltaic Specialists Conference, PVSC 2021 |
---|---|
Country/Territory | United States |
City | Fort Lauderdale |
Period | 20/06/21 → 25/06/21 |
Bibliographical note
Publisher Copyright:© 2021 IEEE.
NREL Publication Number
- NREL/CP-5900-78933
Keywords
- HVPE
- III-V
- multijunction solar cells