Effect of Doping Density on the Performance of Metamorphic GaInAs Solar Cells Grown by Dynamic Hydride Vapor Phase Epitaxy

Kevin Schulte, David Diercks, Corinne Packard, John Simon, Aaron Ptak

Research output: Contribution to conferencePaperpeer-review

Abstract

We study the effect of doping density on the performance of inverted metamorphic 1 eV GaInAs solar cells grown by dynamic hydride vapor phase epitaxy. We find that the doping efficiency of Se in this material is extremely high, with 5x1017 cm-3 being the lowest controlled value we could achieve with our present Se source. We compared rear heterojunction devices grown with intentional n-doping of 5x1017 cm-3 and unintentional n-doping of 5x1015 cm-3. The intentionally doped sample exhibited an open circuit voltage 80 mV higher than the unintentionally doped sample due to reduced dark current, and a bandgap voltage offset, or WOC, of 0.407 V. We believe that future doping optimization will improve carrier collection and WOC in these devices.

Original languageAmerican English
Pages1100-1102
Number of pages3
DOIs
StatePublished - 20 Jun 2021
Event48th IEEE Photovoltaic Specialists Conference, PVSC 2021 - Fort Lauderdale, United States
Duration: 20 Jun 202125 Jun 2021

Conference

Conference48th IEEE Photovoltaic Specialists Conference, PVSC 2021
Country/TerritoryUnited States
CityFort Lauderdale
Period20/06/2125/06/21

Bibliographical note

Publisher Copyright:
© 2021 IEEE.

NREL Publication Number

  • NREL/CP-5900-78933

Keywords

  • HVPE
  • III-V
  • multijunction solar cells

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