Effect of Doping Density on the Performance of Metamorphic GaInAs Solar Cells Grown by Dynamic Hydride Vapor Phase Epitaxy

Kevin Schulte; David Diercks; Corinne Packard; John Simon; Aaron Ptak

doi:10.1109/PVSC43889.2021.9518518

Effect of Doping Density on the Performance of Metamorphic GaInAs Solar Cells Grown by Dynamic Hydride Vapor Phase Epitaxy

Kevin Schulte, David Diercks, Corinne Packard, John Simon, Aaron Ptak

Chemistry and Nanoscience

Research output: Contribution to conference › Paper › peer-review

Abstract

We study the effect of doping density on the performance of inverted metamorphic 1 eV GaInAs solar cells grown by dynamic hydride vapor phase epitaxy. We find that the doping efficiency of Se in this material is extremely high, with 5x1017 cm-3 being the lowest controlled value we could achieve with our present Se source. We compared rear heterojunction devices grown with intentional n-doping of 5x1017 cm-3 and unintentional n-doping of 5x1015 cm-3. The intentionally doped sample exhibited an open circuit voltage 80 mV higher than the unintentionally doped sample due to reduced dark current, and a bandgap voltage offset, or WOC, of 0.407 V. We believe that future doping optimization will improve carrier collection and WOC in these devices.

Original language	American English
Pages	1100-1102
Number of pages	3
DOIs	https://doi.org/10.1109/PVSC43889.2021.9518518 https://doi.org/10.1109/PVSC43889.2021.9518518
State	Published - 20 Jun 2021
Event	48th IEEE Photovoltaic Specialists Conference, PVSC 2021 - Fort Lauderdale, United States Duration: 20 Jun 2021 → 25 Jun 2021

Conference

Conference	48th IEEE Photovoltaic Specialists Conference, PVSC 2021
Country/Territory	United States
City	Fort Lauderdale
Period	20/06/21 → 25/06/21

Bibliographical note

Publisher Copyright:
© 2021 IEEE.

NREL Publication Number

NREL/CP-5900-78933

Keywords

HVPE
III-V
multijunction solar cells

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Schulte, K., Diercks, D., Packard, C., Simon, J., & Ptak, A. (2021). Effect of Doping Density on the Performance of Metamorphic GaInAs Solar Cells Grown by Dynamic Hydride Vapor Phase Epitaxy. 1100-1102. Paper presented at 48th IEEE Photovoltaic Specialists Conference, PVSC 2021, Fort Lauderdale, United States. https://doi.org/10.1109/PVSC43889.2021.9518518, https://doi.org/10.1109/PVSC43889.2021.9518518

@conference{2b86a222e9d24c88a03b523f4292d756,

title = "Effect of Doping Density on the Performance of Metamorphic GaInAs Solar Cells Grown by Dynamic Hydride Vapor Phase Epitaxy",

abstract = "We study the effect of doping density on the performance of inverted metamorphic 1 eV GaInAs solar cells grown by dynamic hydride vapor phase epitaxy. We find that the doping efficiency of Se in this material is extremely high, with 5x1017 cm-3 being the lowest controlled value we could achieve with our present Se source. We compared rear heterojunction devices grown with intentional n-doping of 5x1017 cm-3 and unintentional n-doping of 5x1015 cm-3. The intentionally doped sample exhibited an open circuit voltage 80 mV higher than the unintentionally doped sample due to reduced dark current, and a bandgap voltage offset, or WOC, of 0.407 V. We believe that future doping optimization will improve carrier collection and WOC in these devices.",

keywords = "HVPE, III-V, multijunction solar cells",

author = "Kevin Schulte and David Diercks and Corinne Packard and John Simon and Aaron Ptak",

note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 48th IEEE Photovoltaic Specialists Conference, PVSC 2021 ; Conference date: 20-06-2021 Through 25-06-2021",

year = "2021",

month = jun,

day = "20",

doi = "10.1109/PVSC43889.2021.9518518",

language = "American English",

pages = "1100--1102",

}

Schulte, K, Diercks, D, Packard, C, Simon, J & Ptak, A 2021, 'Effect of Doping Density on the Performance of Metamorphic GaInAs Solar Cells Grown by Dynamic Hydride Vapor Phase Epitaxy', Paper presented at 48th IEEE Photovoltaic Specialists Conference, PVSC 2021, Fort Lauderdale, United States, 20/06/21 - 25/06/21 pp. 1100-1102. https://doi.org/10.1109/PVSC43889.2021.9518518, https://doi.org/10.1109/PVSC43889.2021.9518518

Effect of Doping Density on the Performance of Metamorphic GaInAs Solar Cells Grown by Dynamic Hydride Vapor Phase Epitaxy. / Schulte, Kevin; Diercks, David; Packard, Corinne et al.
2021. 1100-1102 Paper presented at 48th IEEE Photovoltaic Specialists Conference, PVSC 2021, Fort Lauderdale, United States.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Effect of Doping Density on the Performance of Metamorphic GaInAs Solar Cells Grown by Dynamic Hydride Vapor Phase Epitaxy

AU - Schulte, Kevin

AU - Diercks, David

AU - Packard, Corinne

AU - Simon, John

AU - Ptak, Aaron

PY - 2021/6/20

Y1 - 2021/6/20

N2 - We study the effect of doping density on the performance of inverted metamorphic 1 eV GaInAs solar cells grown by dynamic hydride vapor phase epitaxy. We find that the doping efficiency of Se in this material is extremely high, with 5x1017 cm-3 being the lowest controlled value we could achieve with our present Se source. We compared rear heterojunction devices grown with intentional n-doping of 5x1017 cm-3 and unintentional n-doping of 5x1015 cm-3. The intentionally doped sample exhibited an open circuit voltage 80 mV higher than the unintentionally doped sample due to reduced dark current, and a bandgap voltage offset, or WOC, of 0.407 V. We believe that future doping optimization will improve carrier collection and WOC in these devices.

AB - We study the effect of doping density on the performance of inverted metamorphic 1 eV GaInAs solar cells grown by dynamic hydride vapor phase epitaxy. We find that the doping efficiency of Se in this material is extremely high, with 5x1017 cm-3 being the lowest controlled value we could achieve with our present Se source. We compared rear heterojunction devices grown with intentional n-doping of 5x1017 cm-3 and unintentional n-doping of 5x1015 cm-3. The intentionally doped sample exhibited an open circuit voltage 80 mV higher than the unintentionally doped sample due to reduced dark current, and a bandgap voltage offset, or WOC, of 0.407 V. We believe that future doping optimization will improve carrier collection and WOC in these devices.

KW - HVPE

KW - III-V

KW - multijunction solar cells

UR - https://www.scopus.com/pages/publications/85115980347

U2 - 10.1109/PVSC43889.2021.9518518

DO - 10.1109/PVSC43889.2021.9518518

M3 - Paper

AN - SCOPUS:85115980347

SP - 1100

EP - 1102

T2 - 48th IEEE Photovoltaic Specialists Conference, PVSC 2021

Y2 - 20 June 2021 through 25 June 2021

ER -

Effect of Doping Density on the Performance of Metamorphic GaInAs Solar Cells Grown by Dynamic Hydride Vapor Phase Epitaxy

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