Effect of Faceting on the Band Gap of Ordered GaInP

D. J. Friedman; G. S. Horner; Sarah R. Kurtz; K. A. Bertness; J. M. Olson; J. Moreland

doi:10.1063/1.112188

Effect of Faceting on the Band Gap of Ordered GaInP

D. J. Friedman, G. S. Horner, Sarah R. Kurtz, K. A. Bertness, J. M. Olson, J. Moreland

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Abstract

It has been shown that under certain growth conditions the pseudobinary semiconductor alloy GaInP shows cation site ordering into the Cu-Pt structure, and that this ordering results in a lowering of the band gap E_g from that of the disordered alloy. The E_g lowering is known to depend on growth conditions, including the orientation of the substrate. We study the dependence of E_g on epilayer thickness for GaInP grown by metal-organic vapor-phase epitaxy. For epilayers grown on singular (100) substrates under growth conditions conventionally used to produce ordered material, E_g decreases dramatically with increasing epilayer thickness: E_g for a 10-μm-thick epilayer is ∼40 meV lower than for a 1-μm-thick epilayer. This dependence of E_g on thickness can be understood in terms of the recently observed faceting of the GaInP growth surface.

Original language	American English
Pages (from-to)	878-880
Number of pages	3
Journal	Applied Physics Letters
Volume	65
Issue number	7
DOIs	https://doi.org/10.1063/1.112188 https://doi.org/10.1063/1.112188
State	Published - 1994

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NREL/JA-451-6625

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title = "Effect of Faceting on the Band Gap of Ordered GaInP",

abstract = "It has been shown that under certain growth conditions the pseudobinary semiconductor alloy GaInP shows cation site ordering into the Cu-Pt structure, and that this ordering results in a lowering of the band gap Eg from that of the disordered alloy. The Eg lowering is known to depend on growth conditions, including the orientation of the substrate. We study the dependence of Eg on epilayer thickness for GaInP grown by metal-organic vapor-phase epitaxy. For epilayers grown on singular (100) substrates under growth conditions conventionally used to produce ordered material, Eg decreases dramatically with increasing epilayer thickness: Eg for a 10-μm-thick epilayer is ∼40 meV lower than for a 1-μm-thick epilayer. This dependence of Eg on thickness can be understood in terms of the recently observed faceting of the GaInP growth surface.",

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volume = "65",

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T1 - Effect of Faceting on the Band Gap of Ordered GaInP

AU - Friedman, D. J.

AU - Horner, G. S.

AU - Kurtz, Sarah R.

AU - Bertness, K. A.

AU - Olson, J. M.

AU - Moreland, J.

PY - 1994

Y1 - 1994

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AB - It has been shown that under certain growth conditions the pseudobinary semiconductor alloy GaInP shows cation site ordering into the Cu-Pt structure, and that this ordering results in a lowering of the band gap Eg from that of the disordered alloy. The Eg lowering is known to depend on growth conditions, including the orientation of the substrate. We study the dependence of Eg on epilayer thickness for GaInP grown by metal-organic vapor-phase epitaxy. For epilayers grown on singular (100) substrates under growth conditions conventionally used to produce ordered material, Eg decreases dramatically with increasing epilayer thickness: Eg for a 10-μm-thick epilayer is ∼40 meV lower than for a 1-μm-thick epilayer. This dependence of Eg on thickness can be understood in terms of the recently observed faceting of the GaInP growth surface.

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Effect of Faceting on the Band Gap of Ordered GaInP

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