Effect of Front-Surface Doping on Back-Surface Passivation in Ga0.5In0.5P Cells

Sarah R. Kurtz, J. M. Olson, D. J. Friedman, R. Reedy

Research output: Contribution to conferencePaperpeer-review

11 Scopus Citations

Abstract

The emitter doping of a solar cell usually affects the blue response of the cell because the blue light is strongly absorbed at the front of the cell in the emitter layer. However, we show here that changing the identity of the dopant at the front of the cell affects the performance of the back of the cell, sometimes more than the performance of the front of the cell. Specifically, a highly Zn-doped Ga0.5In0.5P layer makes a good back-surface field in an n-on-p Ga0.5In0.5P cell with Se doping, but not when Si doping is used, consistent with the results of Takamoto, et al. During growth of the n-type layers, Zn diffuses up through the cell, piling up at the junction. When Si doping is used, the diffusion is enhanced.

Original languageAmerican English
Pages819-822
Number of pages4
DOIs
StatePublished - 1997
EventProceedings of the 1997 IEEE 26th Photovoltaic Specialists Conference - Anaheim, CA, USA
Duration: 29 Sep 19973 Oct 1997

Conference

ConferenceProceedings of the 1997 IEEE 26th Photovoltaic Specialists Conference
CityAnaheim, CA, USA
Period29/09/973/10/97

Bibliographical note

For preprint version, including full text online document, see NREL/CP-510-22943

NREL Publication Number

  • NREL/CP-520-25048

Fingerprint

Dive into the research topics of 'Effect of Front-Surface Doping on Back-Surface Passivation in Ga0.5In0.5P Cells'. Together they form a unique fingerprint.

Cite this