Abstract
The emitter doping of a solar cell usually affects the blue response of the cell because the blue light is strongly absorbed at the front of the cell in the emitter layer. However, we show here that changing the identity of the dopant at the front of the cell affects the performance of the back of the cell, sometimes more than the performance of the front of the cell. Specifically, a highly Zn-doped Ga0.5In0.5P layer makes a good back-surface field in an n-on-p Ga0.5In0.5P cell with Se doping, but not when Si doping is used, consistent with the results of Takamoto, et al. During growth of the n-type layers, Zn diffuses up through the cell, piling up at the junction. When Si doping is used, the diffusion is enhanced.
Original language | American English |
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Pages | 819-822 |
Number of pages | 4 |
DOIs | |
State | Published - 1997 |
Event | Proceedings of the 1997 IEEE 26th Photovoltaic Specialists Conference - Anaheim, CA, USA Duration: 29 Sep 1997 → 3 Oct 1997 |
Conference
Conference | Proceedings of the 1997 IEEE 26th Photovoltaic Specialists Conference |
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City | Anaheim, CA, USA |
Period | 29/09/97 → 3/10/97 |
Bibliographical note
For preprint version, including full text online document, see NREL/CP-510-22943NREL Publication Number
- NREL/CP-520-25048