Effect of Gas Ambient on the Synthesis of Al and N Co-Doped ZnO: (Al,N) Films and their Influence on PEC Response for Photoelectrochemical Water Splitting Application

Sudhakar Shet; Le Chen; Houwen Tang; Todd Deutsch; Heli Wang; Nuggehalli Ravindra; Fa Yan; John Turner; Mowafak Al-Jassim

doi:10.1002/9781118062111.ch14

Effect of Gas Ambient on the Synthesis of Al and N Co-Doped ZnO: (Al,N) Films and their Influence on PEC Response for Photoelectrochemical Water Splitting Application

Sudhakar Shet, Le Chen, Houwen Tang, Todd Deutsch, Heli Wang, Nuggehalli Ravindra, Fa Yan, John Turner, Mowafak Al-Jassim

Research output: Contribution to conference › Paper › peer-review

1 Scopus Citations

Abstract

Al and N co-doped ZnO thin films, ZnO:(Al,N), are synthesized by radio-frequency magnetron sputtering in mixed Ar and N₂ and mixed O₂ and N₂ gas ambient at 100°C. The ZnO:(Al,N) films deposited in mixed Ar and N₂ gas ambient did not incorporate N, whereas ZnO:(Al,N) films deposited in mixed O₂ and N₂ gas ambient showed enhanced N incorporation and crystallinity as compared to ZnO :N thin films deposited in the same gas ambient. As a result, ZnO:(Al,N) films deposited in mixed O₂ and N₂ gas ambient showed higher photocurrents than the ZnO:(Al,N) thin films deposited in mixed Ar and N ₂ gas ambient. Our results indicate that the gas ambient plays an important role in N incorporation and crystallinity control in Al and N co-doped ZnO thin films.

Original language	American English
Pages	135-142
Number of pages	8
DOIs	https://doi.org/10.1002/9781118062111.ch14 https://doi.org/10.1002/9781118062111.ch14
State	Published - 2011
Event	TMS 2011 - 140th Annual Meeting and Exhibition - San Diego, California Duration: 27 Feb 2011 → 3 Mar 2011

Conference

Conference	TMS 2011 - 140th Annual Meeting and Exhibition
City	San Diego, California
Period	27/02/11 → 3/03/11

NREL Publication Number

NREL/CP-5200-52606

Keywords

Band gap
Co-doping
Crystallinity
Gas ambient
N concentration
Photoelectrochemical
RF power
Sputter
Substrate temperature
ZnO
ZnO:(Al,N)

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Shet, S., Chen, L., Tang, H., Deutsch, T., Wang, H., Ravindra, N., Yan, F., Turner, J., & Al-Jassim, M. (2011). Effect of Gas Ambient on the Synthesis of Al and N Co-Doped ZnO: (Al,N) Films and their Influence on PEC Response for Photoelectrochemical Water Splitting Application. 135-142. Paper presented at TMS 2011 - 140th Annual Meeting and Exhibition, San Diego, California. https://doi.org/10.1002/9781118062111.ch14, https://doi.org/10.1002/9781118062111.ch14

@conference{e6e3be6d5e594141832f52c936fcd0c1,

title = "Effect of Gas Ambient on the Synthesis of Al and N Co-Doped ZnO: (Al,N) Films and their Influence on PEC Response for Photoelectrochemical Water Splitting Application",

abstract = "Al and N co-doped ZnO thin films, ZnO:(Al,N), are synthesized by radio-frequency magnetron sputtering in mixed Ar and N2 and mixed O2 and N2 gas ambient at 100°C. The ZnO:(Al,N) films deposited in mixed Ar and N2 gas ambient did not incorporate N, whereas ZnO:(Al,N) films deposited in mixed O2 and N2 gas ambient showed enhanced N incorporation and crystallinity as compared to ZnO :N thin films deposited in the same gas ambient. As a result, ZnO:(Al,N) films deposited in mixed O2 and N2 gas ambient showed higher photocurrents than the ZnO:(Al,N) thin films deposited in mixed Ar and N 2 gas ambient. Our results indicate that the gas ambient plays an important role in N incorporation and crystallinity control in Al and N co-doped ZnO thin films.",

keywords = "Band gap, Co-doping, Crystallinity, Gas ambient, N concentration, Photoelectrochemical, RF power, Sputter, Substrate temperature, ZnO, ZnO:(Al,N)",

author = "Sudhakar Shet and Le Chen and Houwen Tang and Todd Deutsch and Heli Wang and Nuggehalli Ravindra and Fa Yan and John Turner and Mowafak Al-Jassim",

year = "2011",

doi = "10.1002/9781118062111.ch14",

language = "American English",

pages = "135--142",

note = "TMS 2011 - 140th Annual Meeting and Exhibition ; Conference date: 27-02-2011 Through 03-03-2011",

}

Shet, S, Chen, L, Tang, H, Deutsch, T, Wang, H, Ravindra, N, Yan, F, Turner, J & Al-Jassim, M 2011, 'Effect of Gas Ambient on the Synthesis of Al and N Co-Doped ZnO: (Al,N) Films and their Influence on PEC Response for Photoelectrochemical Water Splitting Application', Paper presented at TMS 2011 - 140th Annual Meeting and Exhibition, San Diego, California, 27/02/11 - 3/03/11 pp. 135-142. https://doi.org/10.1002/9781118062111.ch14, https://doi.org/10.1002/9781118062111.ch14

Effect of Gas Ambient on the Synthesis of Al and N Co-Doped ZnO: (Al,N) Films and their Influence on PEC Response for Photoelectrochemical Water Splitting Application. / Shet, Sudhakar; Chen, Le; Tang, Houwen et al.
2011. 135-142 Paper presented at TMS 2011 - 140th Annual Meeting and Exhibition, San Diego, California.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Effect of Gas Ambient on the Synthesis of Al and N Co-Doped ZnO: (Al,N) Films and their Influence on PEC Response for Photoelectrochemical Water Splitting Application

AU - Shet, Sudhakar

AU - Chen, Le

AU - Tang, Houwen

AU - Deutsch, Todd

AU - Wang, Heli

AU - Ravindra, Nuggehalli

AU - Yan, Fa

AU - Turner, John

AU - Al-Jassim, Mowafak

PY - 2011

Y1 - 2011

N2 - Al and N co-doped ZnO thin films, ZnO:(Al,N), are synthesized by radio-frequency magnetron sputtering in mixed Ar and N2 and mixed O2 and N2 gas ambient at 100°C. The ZnO:(Al,N) films deposited in mixed Ar and N2 gas ambient did not incorporate N, whereas ZnO:(Al,N) films deposited in mixed O2 and N2 gas ambient showed enhanced N incorporation and crystallinity as compared to ZnO :N thin films deposited in the same gas ambient. As a result, ZnO:(Al,N) films deposited in mixed O2 and N2 gas ambient showed higher photocurrents than the ZnO:(Al,N) thin films deposited in mixed Ar and N 2 gas ambient. Our results indicate that the gas ambient plays an important role in N incorporation and crystallinity control in Al and N co-doped ZnO thin films.

AB - Al and N co-doped ZnO thin films, ZnO:(Al,N), are synthesized by radio-frequency magnetron sputtering in mixed Ar and N2 and mixed O2 and N2 gas ambient at 100°C. The ZnO:(Al,N) films deposited in mixed Ar and N2 gas ambient did not incorporate N, whereas ZnO:(Al,N) films deposited in mixed O2 and N2 gas ambient showed enhanced N incorporation and crystallinity as compared to ZnO :N thin films deposited in the same gas ambient. As a result, ZnO:(Al,N) films deposited in mixed O2 and N2 gas ambient showed higher photocurrents than the ZnO:(Al,N) thin films deposited in mixed Ar and N 2 gas ambient. Our results indicate that the gas ambient plays an important role in N incorporation and crystallinity control in Al and N co-doped ZnO thin films.

KW - Band gap

KW - Co-doping

KW - Crystallinity

KW - Gas ambient

KW - N concentration

KW - Photoelectrochemical

KW - RF power

KW - Sputter

KW - Substrate temperature

KW - ZnO

KW - ZnO:(Al,N)

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T2 - TMS 2011 - 140th Annual Meeting and Exhibition

Y2 - 27 February 2011 through 3 March 2011

ER -

Shet S, Chen L, Tang H, Deutsch T, Wang H, Ravindra N et al.. Effect of Gas Ambient on the Synthesis of Al and N Co-Doped ZnO: (Al,N) Films and their Influence on PEC Response for Photoelectrochemical Water Splitting Application. 2011. Paper presented at TMS 2011 - 140th Annual Meeting and Exhibition, San Diego, California. doi: 10.1002/9781118062111.ch14, 10.1002/9781118062111.ch14

Effect of Gas Ambient on the Synthesis of Al and N Co-Doped ZnO: (Al,N) Films and their Influence on PEC Response for Photoelectrochemical Water Splitting Application

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