Effect of Growth Rate and Gallium Source on GaAsN

Sarah Kurtz; J. F. Geisz; B. M. Keyes; W. K. Metzger; D. J. Friedman; J. M. Olson; A. J. Ptak; R. R. King; N. H. Karam

doi:10.1063/1.1565500

Effect of Growth Rate and Gallium Source on GaAsN

Sarah Kurtz, J. F. Geisz, B. M. Keyes, W. K. Metzger, D. J. Friedman, J. M. Olson, A. J. Ptak, R. R. King, N. H. Karam

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Abstract

The effect of growth rate and gallium source on GaAsN were analyzed. The GaAsN grown with trimethylgallium at high growth rates show increased carbon contamination, low photoluminescent lifetimes and high background acceptor concentrations. The lifetime was found to decrease with carbon concentration which shows that low lifetimes in the sample are caused by nonradiative recombination.

Original language	American English
Pages (from-to)	2634-2636
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	16
DOIs	https://doi.org/10.1063/1.1565500 https://doi.org/10.1063/1.1565500
State	Published - 2003

NREL Publication Number

NREL/JA-520-32333

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title = "Effect of Growth Rate and Gallium Source on GaAsN",

abstract = "The effect of growth rate and gallium source on GaAsN were analyzed. The GaAsN grown with trimethylgallium at high growth rates show increased carbon contamination, low photoluminescent lifetimes and high background acceptor concentrations. The lifetime was found to decrease with carbon concentration which shows that low lifetimes in the sample are caused by nonradiative recombination.",

author = "Sarah Kurtz and Geisz, {J. F.} and Keyes, {B. M.} and Metzger, {W. K.} and Friedman, {D. J.} and Olson, {J. M.} and Ptak, {A. J.} and King, {R. R.} and Karam, {N. H.}",

year = "2003",

doi = "10.1063/1.1565500",

language = "American English",

volume = "82",

pages = "2634--2636",

journal = "Applied Physics Letters",

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T1 - Effect of Growth Rate and Gallium Source on GaAsN

AU - Kurtz, Sarah

AU - Geisz, J. F.

AU - Keyes, B. M.

AU - Metzger, W. K.

AU - Friedman, D. J.

AU - Olson, J. M.

AU - Ptak, A. J.

AU - King, R. R.

AU - Karam, N. H.

PY - 2003

Y1 - 2003

N2 - The effect of growth rate and gallium source on GaAsN were analyzed. The GaAsN grown with trimethylgallium at high growth rates show increased carbon contamination, low photoluminescent lifetimes and high background acceptor concentrations. The lifetime was found to decrease with carbon concentration which shows that low lifetimes in the sample are caused by nonradiative recombination.

AB - The effect of growth rate and gallium source on GaAsN were analyzed. The GaAsN grown with trimethylgallium at high growth rates show increased carbon contamination, low photoluminescent lifetimes and high background acceptor concentrations. The lifetime was found to decrease with carbon concentration which shows that low lifetimes in the sample are caused by nonradiative recombination.

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U2 - 10.1063/1.1565500

DO - 10.1063/1.1565500

M3 - Article

AN - SCOPUS:0038559977

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VL - 82

SP - 2634

EP - 2636

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

ER -

Effect of Growth Rate and Gallium Source on GaAsN

Abstract

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