Effect of Heat Treatment on Grain Boundary Properties in Cast Polycrystalline Silicon

Effect of Heat Treatment on Grain Boundary Properties in Cast Polycrystalline Silicon

Research output: Contribution to conference › Paper

Original language	American English
Pages	185-191
Number of pages	7
State	Published - 1982
Event	Grain Boundaries in Semiconductors: Materials Research Society Annual Meeting - Boston, Massachusetts Duration: 1 Nov 1981 → 1 Nov 1981

Conference

Conference	Grain Boundaries in Semiconductors: Materials Research Society Annual Meeting
City	Boston, Massachusetts
Period	1/11/81 → 1/11/81

Bibliographical note

Work performed by Solar Energy Research Institute, Golden, Colorado and University of Florida, Gainesville, Florida

NREL Publication Number

ACNR/CP-213-3832

Cite this

@conference{a29975eee0d9451db7fbfdca1ff9b67b,

title = "Effect of Heat Treatment on Grain Boundary Properties in Cast Polycrystalline Silicon",

author = "NREL",

note = "Work performed by Solar Energy Research Institute, Golden, Colorado and University of Florida, Gainesville, Florida; Grain Boundaries in Semiconductors: Materials Research Society Annual Meeting ; Conference date: 01-11-1981 Through 01-11-1981",

year = "1982",

language = "American English",

pages = "185--191",

}

TY - CONF

T1 - Effect of Heat Treatment on Grain Boundary Properties in Cast Polycrystalline Silicon

AU - NREL, null

N1 - Work performed by Solar Energy Research Institute, Golden, Colorado and University of Florida, Gainesville, Florida

PY - 1982

Y1 - 1982

M3 - Paper

SP - 185

EP - 191

T2 - Grain Boundaries in Semiconductors: Materials Research Society Annual Meeting

Y2 - 1 November 1981 through 1 November 1981

ER -