Effect of Heat Treatments and Window Layer Processing on the Characteristics of CuInGaSe2 Thin Film Solar Cells

doi:10.1109/PVSC.1996.564258

Effect of Heat Treatments and Window Layer Processing on the Characteristics of CuInGaSe2 Thin Film Solar Cells

Research output: Contribution to conference › Paper

Abstract

Interactions between chemical bath deposited CdS and ZnO window layers are a focus of this document. Low temperature anneals were used to follow the changes at the interface. Optical absorption spectra show that CdS and ZnO intermix upon annealing. Heat treatments applied to ZnO/CdS/CuInGaSe/sub2/ thin film solar cells produced changes in the short and long wavelength responses. The latter isattributed to an increase in the energy gap of the absorber by diffusion of S, and it is confirmed by SIMS. The interdiffusion is shown to increase the short wavelength collection, and hence the current density of the devices. Photoluminescence data provides some indication of the quality of the interface.

Original language	American English
Pages	837-840
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.1996.564258
State	Published - 1996
Event	Twenty Fifth IEEE Photovoltaic Specialists Conference - Washington, D.C. Duration: 13 May 1996 → 17 May 1996

Conference

Conference	Twenty Fifth IEEE Photovoltaic Specialists Conference
City	Washington, D.C.
Period	13/05/96 → 17/05/96

NREL Publication Number

NREL/CP-22412

Access to Document

10.1109/PVSC.1996.564258

Cite this

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title = "Effect of Heat Treatments and Window Layer Processing on the Characteristics of CuInGaSe2 Thin Film Solar Cells",

abstract = "Interactions between chemical bath deposited CdS and ZnO window layers are a focus of this document. Low temperature anneals were used to follow the changes at the interface. Optical absorption spectra show that CdS and ZnO intermix upon annealing. Heat treatments applied to ZnO/CdS/CuInGaSe/sub2/ thin film solar cells produced changes in the short and long wavelength responses. The latter isattributed to an increase in the energy gap of the absorber by diffusion of S, and it is confirmed by SIMS. The interdiffusion is shown to increase the short wavelength collection, and hence the current density of the devices. Photoluminescence data provides some indication of the quality of the interface.",

author = "NREL",

year = "1996",

doi = "10.1109/PVSC.1996.564258",

language = "American English",

pages = "837--840",

note = "Twenty Fifth IEEE Photovoltaic Specialists Conference ; Conference date: 13-05-1996 Through 17-05-1996",

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T1 - Effect of Heat Treatments and Window Layer Processing on the Characteristics of CuInGaSe2 Thin Film Solar Cells

AU - NREL, null

PY - 1996

Y1 - 1996

N2 - Interactions between chemical bath deposited CdS and ZnO window layers are a focus of this document. Low temperature anneals were used to follow the changes at the interface. Optical absorption spectra show that CdS and ZnO intermix upon annealing. Heat treatments applied to ZnO/CdS/CuInGaSe/sub2/ thin film solar cells produced changes in the short and long wavelength responses. The latter isattributed to an increase in the energy gap of the absorber by diffusion of S, and it is confirmed by SIMS. The interdiffusion is shown to increase the short wavelength collection, and hence the current density of the devices. Photoluminescence data provides some indication of the quality of the interface.

AB - Interactions between chemical bath deposited CdS and ZnO window layers are a focus of this document. Low temperature anneals were used to follow the changes at the interface. Optical absorption spectra show that CdS and ZnO intermix upon annealing. Heat treatments applied to ZnO/CdS/CuInGaSe/sub2/ thin film solar cells produced changes in the short and long wavelength responses. The latter isattributed to an increase in the energy gap of the absorber by diffusion of S, and it is confirmed by SIMS. The interdiffusion is shown to increase the short wavelength collection, and hence the current density of the devices. Photoluminescence data provides some indication of the quality of the interface.

U2 - 10.1109/PVSC.1996.564258

DO - 10.1109/PVSC.1996.564258

M3 - Paper

SP - 837

EP - 840

T2 - Twenty Fifth IEEE Photovoltaic Specialists Conference

Y2 - 13 May 1996 through 17 May 1996

ER -

Effect of Heat Treatments and Window Layer Processing on the Characteristics of CuInGaSe2 Thin Film Solar Cells

Abstract

Conference

NREL Publication Number

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Cite this