Abstract
In this paper, we have studied the effect of high-resistance SnO2 buffer layers, deposited by low-pressure chemical-vapor deposition, on CdS/CdTe device performance. Our results indicate that when CdS/CdTe devices have a very thin layer of CdS or no CdS at all, the i-SnO2 buffer layer helps to increase device efficiency. When the CdS layer is thicker than 600..Alpha.., the device performance isdominated by CdS thickness, not the i-SnO2 layer. If a very thin CdS layer is to be used to enhance device performance, we conclude that a better SnO2 buffer layer is needed.
| Original language | American English |
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| Number of pages | 8 |
| State | Published - 1998 |
| Event | National Center for Photovoltaics Program Review Meeting - Denver, Colorado Duration: 8 Sep 1998 → 11 Sep 1998 |
Conference
| Conference | National Center for Photovoltaics Program Review Meeting |
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| City | Denver, Colorado |
| Period | 8/09/98 → 11/09/98 |
NREL Publication Number
- NREL/CP-520-25607