Effect of Impurity Trapping on the Capacitance-Voltage Characteristics of n-GaAs/N-AlGaAs Heterojunctions

    Research output: Contribution to journalArticle

    Original languageAmerican English
    Pages (from-to)428-430
    Number of pages3
    JournalApplied Physics Letters
    Issue number6
    StatePublished - 1986

    Bibliographical note

    Work performed by School of Electrical Engineering, Purdue University, West Lafayette, Indiana

    NREL Publication Number

    • ACNR/JA-7448

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