Effect of Light Illumination on the Distribution of GaP State Density in P-Doped a-Si:H

Effect of Light Illumination on the Distribution of GaP State Density in P-Doped a-Si:H

Research output: Contribution to conference › Paper

Original language	American English
Pages	897-900
Number of pages	4
State	Published - 1985
Event	17th International Conference on the Physics of Semiconductors - San Francisco, California Duration: 6 Aug 1984 → 10 Aug 1984

Conference

Conference	17th International Conference on the Physics of Semiconductors
City	San Francisco, California
Period	6/08/84 → 10/08/84

Bibliographical note

Work performed by Department of Physics, Korea Advanced Institute of Science and Technology, Seoul, Korea and the Division of Applied Sciences, Harvard University, Cambridge, Massachusetts

NREL Publication Number

ACNR/CP-15541

Cite this

@conference{33c15b4a15824e1780aa6c74fd881bbf,

title = "Effect of Light Illumination on the Distribution of GaP State Density in P-Doped a-Si:H",

author = "NREL",

note = "Work performed by Department of Physics, Korea Advanced Institute of Science and Technology, Seoul, Korea and the Division of Applied Sciences, Harvard University, Cambridge, Massachusetts; 17th International Conference on the Physics of Semiconductors ; Conference date: 06-08-1984 Through 10-08-1984",

year = "1985",

language = "American English",

pages = "897--900",

}

TY - CONF

T1 - Effect of Light Illumination on the Distribution of GaP State Density in P-Doped a-Si:H

AU - NREL, null

N1 - Work performed by Department of Physics, Korea Advanced Institute of Science and Technology, Seoul, Korea and the Division of Applied Sciences, Harvard University, Cambridge, Massachusetts

PY - 1985

Y1 - 1985

M3 - Paper

SP - 897

EP - 900

T2 - 17th International Conference on the Physics of Semiconductors

Y2 - 6 August 1984 through 10 August 1984

ER -