Effect of Light Soaking on Hot Wire Deposited a-Si:H Films

Daewon Kwon; J. David Cohen; Brent P. Nelson; Eugene Iwaniczko

doi:10.1557/proc-377-301

Effect of Light Soaking on Hot Wire Deposited a-Si:H Films

Daewon Kwon, J. David Cohen, Brent P. Nelson, Eugene Iwaniczko

University of Oregon

Research output: Contribution to conference › Paper › peer-review

15 Scopus Citations

Abstract

We present the results of studies on the defect properties and the effect of light soaking for various hot wire deposited (HW) films. We employ junction capacitance measurements together with the transient photocapacitance spectroscopy to measure the deep defect densities in as-grown state (state A) and in light soaked state (state B). Good agreement is found between the defect densities measured from both measurements. The HW film with a hydrogen content of 10 - 12 at.% shows physical characteristics and defect densities similar to conventional PECVD films. The HW films with hydrogen content, C_H, in the range 2 - 9 at.% show a smaller defect density in state B than the defect density of the film with higher C_H. However, the film with a hydrogen level of less than 1 at.% exhibits markedly inferior physical properties.

Original language	American English
Pages	301-306
Number of pages	6
DOIs	https://doi.org/10.1557/proc-377-301
State	Published - 1995
Externally published	Yes
Event	Proceedings of the 1995 MRS Spring Meeting - San Francisco, CA, USA Duration: 18 Apr 1995 → 21 Apr 1995

Conference

Conference	Proceedings of the 1995 MRS Spring Meeting
City	San Francisco, CA, USA
Period	18/04/95 → 21/04/95

Bibliographical note

Work performed by University of Oregon, Eugene, Oregon and National Renewable Energy Laboratory, Golden, Colorado

NREL Publication Number

NREL/CP-20845

Access to Document

10.1557/proc-377-301

Cite this

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title = "Effect of Light Soaking on Hot Wire Deposited a-Si:H Films",

abstract = "We present the results of studies on the defect properties and the effect of light soaking for various hot wire deposited (HW) films. We employ junction capacitance measurements together with the transient photocapacitance spectroscopy to measure the deep defect densities in as-grown state (state A) and in light soaked state (state B). Good agreement is found between the defect densities measured from both measurements. The HW film with a hydrogen content of 10 - 12 at.% shows physical characteristics and defect densities similar to conventional PECVD films. The HW films with hydrogen content, CH, in the range 2 - 9 at.% show a smaller defect density in state B than the defect density of the film with higher CH. However, the film with a hydrogen level of less than 1 at.% exhibits markedly inferior physical properties.",

author = "Daewon Kwon and Cohen, {J. David} and Nelson, {Brent P.} and Eugene Iwaniczko",

note = "Work performed by University of Oregon, Eugene, Oregon and National Renewable Energy Laboratory, Golden, Colorado; Proceedings of the 1995 MRS Spring Meeting ; Conference date: 18-04-1995 Through 21-04-1995",

year = "1995",

doi = "10.1557/proc-377-301",

language = "American English",

pages = "301--306",

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T1 - Effect of Light Soaking on Hot Wire Deposited a-Si:H Films

AU - Kwon, Daewon

AU - Cohen, J. David

AU - Nelson, Brent P.

AU - Iwaniczko, Eugene

N1 - Work performed by University of Oregon, Eugene, Oregon and National Renewable Energy Laboratory, Golden, Colorado

PY - 1995

Y1 - 1995

N2 - We present the results of studies on the defect properties and the effect of light soaking for various hot wire deposited (HW) films. We employ junction capacitance measurements together with the transient photocapacitance spectroscopy to measure the deep defect densities in as-grown state (state A) and in light soaked state (state B). Good agreement is found between the defect densities measured from both measurements. The HW film with a hydrogen content of 10 - 12 at.% shows physical characteristics and defect densities similar to conventional PECVD films. The HW films with hydrogen content, CH, in the range 2 - 9 at.% show a smaller defect density in state B than the defect density of the film with higher CH. However, the film with a hydrogen level of less than 1 at.% exhibits markedly inferior physical properties.

AB - We present the results of studies on the defect properties and the effect of light soaking for various hot wire deposited (HW) films. We employ junction capacitance measurements together with the transient photocapacitance spectroscopy to measure the deep defect densities in as-grown state (state A) and in light soaked state (state B). Good agreement is found between the defect densities measured from both measurements. The HW film with a hydrogen content of 10 - 12 at.% shows physical characteristics and defect densities similar to conventional PECVD films. The HW films with hydrogen content, CH, in the range 2 - 9 at.% show a smaller defect density in state B than the defect density of the film with higher CH. However, the film with a hydrogen level of less than 1 at.% exhibits markedly inferior physical properties.

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U2 - 10.1557/proc-377-301

DO - 10.1557/proc-377-301

M3 - Paper

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T2 - Proceedings of the 1995 MRS Spring Meeting

Y2 - 18 April 1995 through 21 April 1995

ER -

Effect of Light Soaking on Hot Wire Deposited a-Si:H Films

Abstract

Conference

Bibliographical note

NREL Publication Number

Access to Document

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