Effect of Light Soaking on Hot Wire Deposited a-Si:H Films

Daewon Kwon, J. David Cohen, Brent P. Nelson, Eugene Iwaniczko

Research output: Contribution to conferencePaperpeer-review

15 Scopus Citations


We present the results of studies on the defect properties and the effect of light soaking for various hot wire deposited (HW) films. We employ junction capacitance measurements together with the transient photocapacitance spectroscopy to measure the deep defect densities in as-grown state (state A) and in light soaked state (state B). Good agreement is found between the defect densities measured from both measurements. The HW film with a hydrogen content of 10 - 12 at.% shows physical characteristics and defect densities similar to conventional PECVD films. The HW films with hydrogen content, CH, in the range 2 - 9 at.% show a smaller defect density in state B than the defect density of the film with higher CH. However, the film with a hydrogen level of less than 1 at.% exhibits markedly inferior physical properties.

Original languageAmerican English
Number of pages6
StatePublished - 1995
Externally publishedYes
EventProceedings of the 1995 MRS Spring Meeting - San Francisco, CA, USA
Duration: 18 Apr 199521 Apr 1995


ConferenceProceedings of the 1995 MRS Spring Meeting
CitySan Francisco, CA, USA

Bibliographical note

Work performed by University of Oregon, Eugene, Oregon and National Renewable Energy Laboratory, Golden, Colorado

NREL Publication Number

  • NREL/CP-20845


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