Effect of Microstructure on Excitonic Luminescence of Spontaneously Ordered Ga0.52In0.48P Alloys

Hyeonsik M. Cheong, A. Mascarenhas, S. P. Ahrenkiel, K. M. Jones, J. F. Geisz, J. M. Olson

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22 Scopus Citations

Abstract

We compare the results of low-temperature (4.2 K) microphotoluminescence (PL) measurements on cleaved edges of spontaneously ordered GaInP2 alloy samples with the results of cross-section transmission electron microscopy (TEM). The TEM dark-field images show that the size of ordered domains grows as the deposition progresses. The excitonic luminescence peak in the micro-PL spectra of GaInP2 is stronger near the surface of the thin film than near the substrate. From these results, we conclude that there is a direct correlation between the domain size or alternatively, the density of domain boundaries, and the relative strength of the excitonic peak.

Original languageAmerican English
Pages (from-to)5418-5420
Number of pages3
JournalJournal of Applied Physics
Volume83
Issue number10
DOIs
StatePublished - 1998

NREL Publication Number

  • NREL/JA-590-25658

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