Effect of Near-Interface Compensation of CdSeTe Absorber Layers on Solar Cell Performance

Brian Good; Eric Colegrove; Matthew Reese

doi:10.1109/PVSC48317.2022.9938827

Effect of Near-Interface Compensation of CdSeTe Absorber Layers on Solar Cell Performance

Brian Good, Eric Colegrove, Matthew Reese

Materials Science

Research output: Contribution to conference › Paper › peer-review

Abstract

Arsenic has been shown to be an effective p-type dopant of CdTe. However, challenges remain in the fabrication of high efficiency CdTe solar cells using As. As-doped CdTe is prone to self-compensation and observed accumulation of dopant atoms in CdTe near the interface with MgZnO (MZO) suggests that this could be occurring. In this study, we use SCAPS 1-D modeling software to investigate the effect of near-interface compensation. We consider three cases: shallow donors, deep recombination centers, and a thin layer of excess positive charge accumulation. All of these cases are shown to have significant effects on the current-voltage characteristics, while the thin charge layer also affects capacitance-voltage measurements.

Original language	American English
Pages	295-297
Number of pages	3
DOIs	https://doi.org/10.1109/PVSC48317.2022.9938827 https://doi.org/10.1109/PVSC48317.2022.9938827
State	Published - 2022
Event	49th IEEE Photovoltaics Specialists Conference, PVSC 2022 - Philadelphia, United States Duration: 5 Jun 2022 → 10 Jun 2022

Conference

Conference	49th IEEE Photovoltaics Specialists Conference, PVSC 2022
Country/Territory	United States
City	Philadelphia
Period	5/06/22 → 10/06/22

Bibliographical note

Publisher Copyright:
© 2022 IEEE.

NREL Publication Number

NREL/CP-5K00-81909

Keywords

arsenic
cadmium telluride
CdSeTe
compensation
doping
modeling
simulation

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title = "Effect of Near-Interface Compensation of CdSeTe Absorber Layers on Solar Cell Performance",

abstract = "Arsenic has been shown to be an effective p-type dopant of CdTe. However, challenges remain in the fabrication of high efficiency CdTe solar cells using As. As-doped CdTe is prone to self-compensation and observed accumulation of dopant atoms in CdTe near the interface with MgZnO (MZO) suggests that this could be occurring. In this study, we use SCAPS 1-D modeling software to investigate the effect of near-interface compensation. We consider three cases: shallow donors, deep recombination centers, and a thin layer of excess positive charge accumulation. All of these cases are shown to have significant effects on the current-voltage characteristics, while the thin charge layer also affects capacitance-voltage measurements.",

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author = "Brian Good and Eric Colegrove and Matthew Reese",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 49th IEEE Photovoltaics Specialists Conference, PVSC 2022 ; Conference date: 05-06-2022 Through 10-06-2022",

year = "2022",

doi = "10.1109/PVSC48317.2022.9938827",

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T1 - Effect of Near-Interface Compensation of CdSeTe Absorber Layers on Solar Cell Performance

AU - Good, Brian

AU - Colegrove, Eric

AU - Reese, Matthew

PY - 2022

Y1 - 2022

N2 - Arsenic has been shown to be an effective p-type dopant of CdTe. However, challenges remain in the fabrication of high efficiency CdTe solar cells using As. As-doped CdTe is prone to self-compensation and observed accumulation of dopant atoms in CdTe near the interface with MgZnO (MZO) suggests that this could be occurring. In this study, we use SCAPS 1-D modeling software to investigate the effect of near-interface compensation. We consider three cases: shallow donors, deep recombination centers, and a thin layer of excess positive charge accumulation. All of these cases are shown to have significant effects on the current-voltage characteristics, while the thin charge layer also affects capacitance-voltage measurements.

AB - Arsenic has been shown to be an effective p-type dopant of CdTe. However, challenges remain in the fabrication of high efficiency CdTe solar cells using As. As-doped CdTe is prone to self-compensation and observed accumulation of dopant atoms in CdTe near the interface with MgZnO (MZO) suggests that this could be occurring. In this study, we use SCAPS 1-D modeling software to investigate the effect of near-interface compensation. We consider three cases: shallow donors, deep recombination centers, and a thin layer of excess positive charge accumulation. All of these cases are shown to have significant effects on the current-voltage characteristics, while the thin charge layer also affects capacitance-voltage measurements.

KW - arsenic

KW - cadmium telluride

KW - CdSeTe

KW - compensation

KW - doping

KW - modeling

KW - simulation

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DO - 10.1109/PVSC48317.2022.9938827

M3 - Paper

AN - SCOPUS:85142785382

SP - 295

EP - 297

T2 - 49th IEEE Photovoltaics Specialists Conference, PVSC 2022

Y2 - 5 June 2022 through 10 June 2022

ER -

Effect of Near-Interface Compensation of CdSeTe Absorber Layers on Solar Cell Performance

Abstract

Conference

Bibliographical note

NREL Publication Number

Keywords

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