Effect of Nickel Contamination on High Carrier Lifetime n-Type Crystalline Silicon

The injection-dependent lifetimes of different levels of Ni-contaminated n-type Czochralski (CZ) silicon wafers were investigated using resonant-coupled photoconductance decay (RCPCD) and quasi-steady-state photoconductance technique (QSSPC). The lifetime degradation of the most heavily contaminated samples was caused by Ni silicide precipitates at the surface of the wafers. The impact on lifetime was determined by surface recombination velocities (SRV). SRV values from RCPCD were comparable to those extracted by the QSSPC technique. A direct correlation between minority carrier lifetime and the concentration of electrically active substitutional Ni and Ni silicide precipitate traps measured using deep level transient spectroscopy was established.