Effect of Nitrogen Doping on Microdefects and Minority Charge Carrier Lifetime of High-Purity, Dislocation-Free and Multicrystalline Silicon

doi:10.1109/WCPEC.1994.520195

Effect of Nitrogen Doping on Microdefects and Minority Charge Carrier Lifetime of High-Purity, Dislocation-Free and Multicrystalline Silicon

Research output: Contribution to conference › Paper

Original language	American English
Pages	Vol. II: 1343-1346
Number of pages	4
DOIs	https://doi.org/10.1109/WCPEC.1994.520195
State	Published - 1994
Event	1994 IEEE First World Conference on Photovoltaic Energy Conversion: Twenty-Fourth IEEE Photovoltaic Specialists Conference - Waikoloa, Hawaii Duration: 5 Dec 1994 → 9 Dec 1994

Conference

Conference	1994 IEEE First World Conference on Photovoltaic Energy Conversion: Twenty-Fourth IEEE Photovoltaic Specialists Conference
City	Waikoloa, Hawaii
Period	5/12/94 → 9/12/94

NREL Publication Number

NREL/CP-451-7418

Access to Document

10.1109/WCPEC.1994.520195

Cite this

NREL (1994). Effect of Nitrogen Doping on Microdefects and Minority Charge Carrier Lifetime of High-Purity, Dislocation-Free and Multicrystalline Silicon. Vol. II: 1343-1346. Paper presented at 1994 IEEE First World Conference on Photovoltaic Energy Conversion: Twenty-Fourth IEEE Photovoltaic Specialists Conference, Waikoloa, Hawaii. https://doi.org/10.1109/WCPEC.1994.520195

@conference{7bf3c571da704a9396cf6b89ba444884,

title = "Effect of Nitrogen Doping on Microdefects and Minority Charge Carrier Lifetime of High-Purity, Dislocation-Free and Multicrystalline Silicon",

author = "NREL",

year = "1994",

doi = "10.1109/WCPEC.1994.520195",

language = "American English",

pages = "Vol. II: 1343--1346",

note = "1994 IEEE First World Conference on Photovoltaic Energy Conversion: Twenty-Fourth IEEE Photovoltaic Specialists Conference ; Conference date: 05-12-1994 Through 09-12-1994",

}

NREL 1994, 'Effect of Nitrogen Doping on Microdefects and Minority Charge Carrier Lifetime of High-Purity, Dislocation-Free and Multicrystalline Silicon', Paper presented at 1994 IEEE First World Conference on Photovoltaic Energy Conversion: Twenty-Fourth IEEE Photovoltaic Specialists Conference, Waikoloa, Hawaii, 5/12/94 - 9/12/94 pp. Vol. II: 1343-1346. https://doi.org/10.1109/WCPEC.1994.520195

Effect of Nitrogen Doping on Microdefects and Minority Charge Carrier Lifetime of High-Purity, Dislocation-Free and Multicrystalline Silicon. / NREL.
1994. Vol. II: 1343-1346 Paper presented at 1994 IEEE First World Conference on Photovoltaic Energy Conversion: Twenty-Fourth IEEE Photovoltaic Specialists Conference, Waikoloa, Hawaii.

Research output: Contribution to conference › Paper

TY - CONF

T1 - Effect of Nitrogen Doping on Microdefects and Minority Charge Carrier Lifetime of High-Purity, Dislocation-Free and Multicrystalline Silicon

AU - NREL, null

PY - 1994

Y1 - 1994

U2 - 10.1109/WCPEC.1994.520195

DO - 10.1109/WCPEC.1994.520195

M3 - Paper

SP - Vol. II: 1343-1346

T2 - 1994 IEEE First World Conference on Photovoltaic Energy Conversion: Twenty-Fourth IEEE Photovoltaic Specialists Conference

Y2 - 5 December 1994 through 9 December 1994

ER -