Effect of Nitrogen on the Band Structure of GaInNAs Alloys

W. Shan; W. Walukiewicz; J. W. Ager; E. E. Haller; J. F. Geisz; D. J. Friedman; J. M. Olson; Sarah R. Kurtz

doi:10.1063/1.371148

Effect of Nitrogen on the Band Structure of GaInNAs Alloys

W. Shan, W. Walukiewicz, J. W. Ager, E. E. Haller, J. F. Geisz, D. J. Friedman, J. M. Olson, Sarah R. Kurtz

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Abstract

We show that incorporation of nitrogen in Ga_1-xIn_xAs to form Ga_1-xIn_xN_yAs_1-y alloys leads to a splitting of the conduction band into two nonparabolic subbands. The splitting can be described in terms of an anticrossing interaction between a narrow band of localized nitrogen states and the extended conduction-band states of the semiconductor matrix. The downward shift of the lower subband edge accounts for the N-induced reduction of the fundamental band-gap energy. An analysis of the relationship between the subband splitting and the band-gap reduction demonstrates that the energetic location of the valence band is nearly independent of the N content in Ga_1-xIn_xN_yAs_1-y alloys.

Original language	American English
Pages (from-to)	2349-2351
Number of pages	3
Journal	Journal of Applied Physics
Volume	86
Issue number	4
DOIs	https://doi.org/10.1063/1.371148 https://doi.org/10.1063/1.371148
State	Published - 15 Aug 1999

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NREL/JA-590-27902

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title = "Effect of Nitrogen on the Band Structure of GaInNAs Alloys",

abstract = "We show that incorporation of nitrogen in Ga1-xInxAs to form Ga1-xInxNyAs1-y alloys leads to a splitting of the conduction band into two nonparabolic subbands. The splitting can be described in terms of an anticrossing interaction between a narrow band of localized nitrogen states and the extended conduction-band states of the semiconductor matrix. The downward shift of the lower subband edge accounts for the N-induced reduction of the fundamental band-gap energy. An analysis of the relationship between the subband splitting and the band-gap reduction demonstrates that the energetic location of the valence band is nearly independent of the N content in Ga1-xInxNyAs1-y alloys.",

author = "W. Shan and W. Walukiewicz and Ager, {J. W.} and Haller, {E. E.} and Geisz, {J. F.} and Friedman, {D. J.} and Olson, {J. M.} and Kurtz, {Sarah R.}",

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T1 - Effect of Nitrogen on the Band Structure of GaInNAs Alloys

AU - Shan, W.

AU - Walukiewicz, W.

AU - Ager, J. W.

AU - Haller, E. E.

AU - Geisz, J. F.

AU - Friedman, D. J.

AU - Olson, J. M.

AU - Kurtz, Sarah R.

PY - 1999/8/15

Y1 - 1999/8/15

N2 - We show that incorporation of nitrogen in Ga1-xInxAs to form Ga1-xInxNyAs1-y alloys leads to a splitting of the conduction band into two nonparabolic subbands. The splitting can be described in terms of an anticrossing interaction between a narrow band of localized nitrogen states and the extended conduction-band states of the semiconductor matrix. The downward shift of the lower subband edge accounts for the N-induced reduction of the fundamental band-gap energy. An analysis of the relationship between the subband splitting and the band-gap reduction demonstrates that the energetic location of the valence band is nearly independent of the N content in Ga1-xInxNyAs1-y alloys.

AB - We show that incorporation of nitrogen in Ga1-xInxAs to form Ga1-xInxNyAs1-y alloys leads to a splitting of the conduction band into two nonparabolic subbands. The splitting can be described in terms of an anticrossing interaction between a narrow band of localized nitrogen states and the extended conduction-band states of the semiconductor matrix. The downward shift of the lower subband edge accounts for the N-induced reduction of the fundamental band-gap energy. An analysis of the relationship between the subband splitting and the band-gap reduction demonstrates that the energetic location of the valence band is nearly independent of the N content in Ga1-xInxNyAs1-y alloys.

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Effect of Nitrogen on the Band Structure of GaInNAs Alloys

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