Effect of Oxygen Contamination on the Electronic Properties of Hot-Wire CVD Amorphous Silicon Germanium Alloys: Paper no. 0910-A02-05

Effect of Oxygen Contamination on the Electronic Properties of Hot-Wire CVD Amorphous Silicon Germanium Alloys: Paper no. 0910-A02-05

Research output: Contribution to conference › Paper

Original language	American English
Pages	47-52
Number of pages	6
State	Published - 2006
Event	Amorphous and Polycrystalline Thin-Film Silicon Science and Technology: Materials Research Society Symposium - San Francisco, California Duration: 18 Apr 2006 → 21 Apr 2006

Conference

Conference	Amorphous and Polycrystalline Thin-Film Silicon Science and Technology: Materials Research Society Symposium
City	San Francisco, California
Period	18/04/06 → 21/04/06

NREL Publication Number

NREL/CP-520-41681

Cite this

@conference{69069796377948ff8db57919b88bd1a5,

title = "Effect of Oxygen Contamination on the Electronic Properties of Hot-Wire CVD Amorphous Silicon Germanium Alloys: Paper no. 0910-A02-05",

author = "NREL",

year = "2006",

language = "American English",

pages = "47--52",

note = "Amorphous and Polycrystalline Thin-Film Silicon Science and Technology: Materials Research Society Symposium ; Conference date: 18-04-2006 Through 21-04-2006",

}