Effect of Photodegradation on Transient and Steady State Forward Bias Characteristics of an a-Si:H P-I-N Diode

Effect of Photodegradation on Transient and Steady State Forward Bias Characteristics of an a-Si:H P-I-N Diode

Research output: Contribution to conference › Paper

Original language	American English
Pages	467-472
Number of pages	6
State	Published - 1992
Event	Amorphous Silicon Technology - 1992: Materials Research Society Symposium - San Francisco, California Duration: 27 Apr 1992 → 1 May 1992

Conference

Conference	Amorphous Silicon Technology - 1992: Materials Research Society Symposium
City	San Francisco, California
Period	27/04/92 → 1/05/92

Bibliographical note

Work performed by Laboratoire de Physique des Interfaces et des Couches Minces, Ecole Polytechnique, Palaiseau Cedex, France and University of North Carolina, Chapel Hill, North Carolina

NREL Publication Number

ACNR/CP-14602

Cite this

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title = "Effect of Photodegradation on Transient and Steady State Forward Bias Characteristics of an a-Si:H P-I-N Diode",

author = "NREL",

note = "Work performed by Laboratoire de Physique des Interfaces et des Couches Minces, Ecole Polytechnique, Palaiseau Cedex, France and University of North Carolina, Chapel Hill, North Carolina; Amorphous Silicon Technology - 1992: Materials Research Society Symposium ; Conference date: 27-04-1992 Through 01-05-1992",

year = "1992",

language = "American English",

pages = "467--472",

}

TY - CONF

T1 - Effect of Photodegradation on Transient and Steady State Forward Bias Characteristics of an a-Si:H P-I-N Diode

AU - NREL, null

N1 - Work performed by Laboratoire de Physique des Interfaces et des Couches Minces, Ecole Polytechnique, Palaiseau Cedex, France and University of North Carolina, Chapel Hill, North Carolina

PY - 1992

Y1 - 1992

M3 - Paper

SP - 467

EP - 472

T2 - Amorphous Silicon Technology - 1992: Materials Research Society Symposium

Y2 - 27 April 1992 through 1 May 1992

ER -