Effect of Proton and Silicon Ion Irradiation on Defect Formation in GaAs

    Research output: Contribution to journalArticlepeer-review

    Original languageAmerican English
    Pages (from-to)3016-3024
    Number of pages9
    JournalIEEE Transactions on Nuclear Science
    Volume55
    Issue number6
    DOIs
    StatePublished - 2008

    NREL Publication Number

    • NREL/JA-520-45362

    Keywords

    • defect formation
    • disordered regions
    • displacement damage
    • EBIC
    • GaAs
    • heavy ion
    • irradiation
    • NIEL
    • recoil spectrum
    • recombination centers
    • TEM

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