Effect of Proton and Silicon Ion Irradiation on Defect Formation in GaAs

Research output: Contribution to journalArticlepeer-review

Original languageAmerican English
Pages (from-to)3016-3024
Number of pages9
JournalIEEE Transactions on Nuclear Science
Volume55
Issue number6
DOIs
StatePublished - 2008

NREL Publication Number

  • NREL/JA-520-45362

Keywords

  • defect formation
  • disordered regions
  • displacement damage
  • EBIC
  • GaAs
  • heavy ion
  • irradiation
  • NIEL
  • recoil spectrum
  • recombination centers
  • TEM

Cite this