Effect of Reduced Deposition Temperature, Time, and Thickness on Cu(InGa)Se2 Films and Devices

doi:10.1109/PVSC.1997.654095

Effect of Reduced Deposition Temperature, Time, and Thickness on Cu(InGa)Se2 Films and Devices

Research output: Contribution to conference › Paper

Abstract

This paper will address the ability to reduce process costs for multisource evaporation of Cu(InGa)Se2 by reducing the deposition temperature and film thickness and increasing the deposition rate. Substrate temperature (Tss) is varied from 600 >/= Tss >/= 350 deg C using fixed elemental fluxes. The grain size decreases over the entire range but Na incorporation from the soda lime glass substratedoesn't change. Solar cell efficiency decreases slowly for 500 >/= Tss >/= 400 deg C. At Tss below 400 deg C there is a change in composition attributed to a change in the re-evaporation of In and Ga species in the growing film. Device performance is shown to be unaffected by reducing the film thickness from 2.5 to less than 1.5 mum. Finally, a kinetic reaction model is presented for the growthof CuInSe2 by multisource elemental evaporation which provides quantitative predictions of the time to grow CuInSe2 films as a function of substrate temperature and delivery rate.

Original language	American English
Pages	331-334
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.1997.654095
State	Published - 1997
Event	Twenty Sixth IEEE Photovoltaic Specialists Conference - Anaheim, California Duration: 29 Sep 1997 → 3 Oct 1997

Conference

Conference	Twenty Sixth IEEE Photovoltaic Specialists Conference
City	Anaheim, California
Period	29/09/97 → 3/10/97

Bibliographical note

Work performed by University of Delaware, Newark, Delaware

NREL Publication Number

NREL/CP-520-24953

Access to Document

10.1109/PVSC.1997.654095

Cite this

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title = "Effect of Reduced Deposition Temperature, Time, and Thickness on Cu(InGa)Se2 Films and Devices",

abstract = "This paper will address the ability to reduce process costs for multisource evaporation of Cu(InGa)Se2 by reducing the deposition temperature and film thickness and increasing the deposition rate. Substrate temperature (Tss) is varied from 600 >/= Tss >/= 350 deg C using fixed elemental fluxes. The grain size decreases over the entire range but Na incorporation from the soda lime glass substratedoesn't change. Solar cell efficiency decreases slowly for 500 >/= Tss >/= 400 deg C. At Tss below 400 deg C there is a change in composition attributed to a change in the re-evaporation of In and Ga species in the growing film. Device performance is shown to be unaffected by reducing the film thickness from 2.5 to less than 1.5 mum. Finally, a kinetic reaction model is presented for the growthof CuInSe2 by multisource elemental evaporation which provides quantitative predictions of the time to grow CuInSe2 films as a function of substrate temperature and delivery rate.",

author = "NREL",

note = "Work performed by University of Delaware, Newark, Delaware; Twenty Sixth IEEE Photovoltaic Specialists Conference ; Conference date: 29-09-1997 Through 03-10-1997",

year = "1997",

doi = "10.1109/PVSC.1997.654095",

language = "American English",

pages = "331--334",

}

TY - CONF

T1 - Effect of Reduced Deposition Temperature, Time, and Thickness on Cu(InGa)Se2 Films and Devices

AU - NREL, null

N1 - Work performed by University of Delaware, Newark, Delaware

PY - 1997

Y1 - 1997

N2 - This paper will address the ability to reduce process costs for multisource evaporation of Cu(InGa)Se2 by reducing the deposition temperature and film thickness and increasing the deposition rate. Substrate temperature (Tss) is varied from 600 >/= Tss >/= 350 deg C using fixed elemental fluxes. The grain size decreases over the entire range but Na incorporation from the soda lime glass substratedoesn't change. Solar cell efficiency decreases slowly for 500 >/= Tss >/= 400 deg C. At Tss below 400 deg C there is a change in composition attributed to a change in the re-evaporation of In and Ga species in the growing film. Device performance is shown to be unaffected by reducing the film thickness from 2.5 to less than 1.5 mum. Finally, a kinetic reaction model is presented for the growthof CuInSe2 by multisource elemental evaporation which provides quantitative predictions of the time to grow CuInSe2 films as a function of substrate temperature and delivery rate.

AB - This paper will address the ability to reduce process costs for multisource evaporation of Cu(InGa)Se2 by reducing the deposition temperature and film thickness and increasing the deposition rate. Substrate temperature (Tss) is varied from 600 >/= Tss >/= 350 deg C using fixed elemental fluxes. The grain size decreases over the entire range but Na incorporation from the soda lime glass substratedoesn't change. Solar cell efficiency decreases slowly for 500 >/= Tss >/= 400 deg C. At Tss below 400 deg C there is a change in composition attributed to a change in the re-evaporation of In and Ga species in the growing film. Device performance is shown to be unaffected by reducing the film thickness from 2.5 to less than 1.5 mum. Finally, a kinetic reaction model is presented for the growthof CuInSe2 by multisource elemental evaporation which provides quantitative predictions of the time to grow CuInSe2 films as a function of substrate temperature and delivery rate.

U2 - 10.1109/PVSC.1997.654095

DO - 10.1109/PVSC.1997.654095

M3 - Paper

SP - 331

EP - 334

T2 - Twenty Sixth IEEE Photovoltaic Specialists Conference

Y2 - 29 September 1997 through 3 October 1997

ER -

Effect of Reduced Deposition Temperature, Time, and Thickness on Cu(InGa)Se2 Films and Devices

Abstract

Conference

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NREL Publication Number

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