Effect of Reduced Deposition Temperature, Time, and Thickness on Cu(InGa)Se2 Films and Devices

    Research output: Contribution to conferencePaper


    This paper will address the ability to reduce process costs for multisource evaporation of Cu(InGa)Se2 by reducing the deposition temperature and film thickness and increasing the deposition rate. Substrate temperature (Tss) is varied from 600 >/= Tss >/= 350 deg C using fixed elemental fluxes. The grain size decreases over the entire range but Na incorporation from the soda lime glass substratedoesn't change. Solar cell efficiency decreases slowly for 500 >/= Tss >/= 400 deg C. At Tss below 400 deg C there is a change in composition attributed to a change in the re-evaporation of In and Ga species in the growing film. Device performance is shown to be unaffected by reducing the film thickness from 2.5 to less than 1.5 mum. Finally, a kinetic reaction model is presented for the growthof CuInSe2 by multisource elemental evaporation which provides quantitative predictions of the time to grow CuInSe2 films as a function of substrate temperature and delivery rate.
    Original languageAmerican English
    Number of pages4
    StatePublished - 1997
    EventTwenty Sixth IEEE Photovoltaic Specialists Conference - Anaheim, California
    Duration: 29 Sep 19973 Oct 1997


    ConferenceTwenty Sixth IEEE Photovoltaic Specialists Conference
    CityAnaheim, California

    Bibliographical note

    Work performed by University of Delaware, Newark, Delaware

    NREL Publication Number

    • NREL/CP-520-24953


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