Abstract
Using a manufacturing friendly process we have developed effective techniques for incorporating Ga in CIGS films. In one technique we configure the Ga to form an effective BSF and to reduce point defects in the SC region while not increasing the band gap. This results in collection lengths of 2 .mu.m and Jsc's which are consistently in the 40 mA/cm2 range. In a second technique we alloy Ga in theSC region and increase the band gap. This results in mild deterioration of both bulk and surface properties attributable to an unoptimized incorporation environment. The surface properties are shown to be dominated by recombination lifetime which varies systematically with the Se flux environment during surface formation. These insights are providing the foundation for ongoing advances in deviceperformance and imply no fundamental limitations to performance for these processing techniques.
Original language | American English |
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Pages | 589-596 |
Number of pages | 8 |
State | Published - 1997 |
Event | NREL/SNL Photovoltaics Program Review: 14th Conference - Lakewood, Colorado Duration: 18 Nov 1996 → 22 Nov 1996 |
Conference
Conference | NREL/SNL Photovoltaics Program Review: 14th Conference |
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City | Lakewood, Colorado |
Period | 18/11/96 → 22/11/96 |
Bibliographical note
Work performed by University of South Florida, Tampa, FloridaNREL Publication Number
- NREL/CP-23737