Effect of Surface Processing Conditions on the Junction Properties of CuInxGa1-xSe2 Solar Cells

    Research output: Contribution to conferencePaper

    Abstract

    Using a manufacturing friendly process we have developed effective techniques for incorporating Ga in CIGS films. In one technique we configure the Ga to form an effective BSF and to reduce point defects in the SC region while not increasing the band gap. This results in collection lengths of 2 .mu.m and Jsc's which are consistently in the 40 mA/cm2 range. In a second technique we alloy Ga in theSC region and increase the band gap. This results in mild deterioration of both bulk and surface properties attributable to an unoptimized incorporation environment. The surface properties are shown to be dominated by recombination lifetime which varies systematically with the Se flux environment during surface formation. These insights are providing the foundation for ongoing advances in deviceperformance and imply no fundamental limitations to performance for these processing techniques.
    Original languageAmerican English
    Pages589-596
    Number of pages8
    StatePublished - 1997
    EventNREL/SNL Photovoltaics Program Review: 14th Conference - Lakewood, Colorado
    Duration: 18 Nov 199622 Nov 1996

    Conference

    ConferenceNREL/SNL Photovoltaics Program Review: 14th Conference
    CityLakewood, Colorado
    Period18/11/9622/11/96

    Bibliographical note

    Work performed by University of South Florida, Tampa, Florida

    NREL Publication Number

    • NREL/CP-23737

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