Effect of Temperature during Illumination on Annealing of Metastable Dangling Bonds in Hydrogenated Amorphous Silicon

doi:10.1063/1.97494

Effect of Temperature during Illumination on Annealing of Metastable Dangling Bonds in Hydrogenated Amorphous Silicon

Research output: Contribution to journal › Article

Original language	American English
Pages (from-to)	957-959
Number of pages	3
Journal	Applied Physics Letters
Volume	49
Issue number	15
DOIs	https://doi.org/10.1063/1.97494
State	Published - 1986

Bibliographical note

Work performed by Xerox Palo Alto Research Center, Palo Alto, California and Max-Planck-Institut fur Festkorperforschung, Stuttgart, West Germany

NREL Publication Number

ACNR/JA-8640

Access to Document

10.1063/1.97494

Cite this

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title = "Effect of Temperature during Illumination on Annealing of Metastable Dangling Bonds in Hydrogenated Amorphous Silicon",

author = "NREL",

note = "Work performed by Xerox Palo Alto Research Center, Palo Alto, California and Max-Planck-Institut fur Festkorperforschung, Stuttgart, West Germany",

year = "1986",

doi = "10.1063/1.97494",

language = "American English",

volume = "49",

pages = "957--959",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "15",

}

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T1 - Effect of Temperature during Illumination on Annealing of Metastable Dangling Bonds in Hydrogenated Amorphous Silicon

AU - NREL, null

N1 - Work performed by Xerox Palo Alto Research Center, Palo Alto, California and Max-Planck-Institut fur Festkorperforschung, Stuttgart, West Germany

PY - 1986

Y1 - 1986

U2 - 10.1063/1.97494

DO - 10.1063/1.97494

M3 - Article

SN - 0003-6951

VL - 49

SP - 957

EP - 959

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

ER -