Abstract
We evaluate material properties of a number of textured SnO2 and ZnO substrates and their effect on current generation in a-Si. Most of these TCOs have been used by others for a-Si device research of module fabrication. Bulk optoelectronic and structural properties are reported for seven TCO films with haze from 1 to 14%. Our results show that increasing haze above~5% has limited effectivenessfor increasing the generation at long wavelengths. In presently available textured ZnO, current generation is about 0.6 mA/cm2 greater than in textured SnO2. There may be greater advantages to using ZnO in multijunction devices since much thinner i-layers may be used to give the same Jsc with improved stability, shorter deposition time and less GeH4 usage.
Original language | American English |
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Pages | 1129-1132 |
Number of pages | 4 |
DOIs | |
State | Published - 1996 |
Event | Twenty Fifth IEEE Photovoltaic Specialists Conference - Washington, D.C. Duration: 13 May 1996 → 17 May 1996 |
Conference
Conference | Twenty Fifth IEEE Photovoltaic Specialists Conference |
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City | Washington, D.C. |
Period | 13/05/96 → 17/05/96 |
Bibliographical note
Work performed by the University of Delaware, Newark, Delaware and Harvard University, Cambridge, MassachusettsNREL Publication Number
- NREL/CP-22512