Effect of Window-Layer Materials on p-n Junction Location in Cu(In,Ga)Se2 Solar Cells

Chun Sheng Jiang; Lorelle Mansfield; Stephen Glynn; Chuanxiao Xiao; Steven Christensen; Mowafak Al-Jassim; Rebekah Garris

doi:10.1109/JPHOTOV.2018.2874039

Effect of Window-Layer Materials on p-n Junction Location in Cu(In,Ga)Se2 Solar Cells

Chun Sheng Jiang, Lorelle Mansfield, Stephen Glynn, Chuanxiao Xiao, Steven Christensen, Mowafak Al-Jassim, Rebekah Garris

Materials Science

Research output: Contribution to journal › Article › peer-review

8 Scopus Citations

Abstract

We report on measurements of junction location in Cu(In,Ga)Se₂ (CIGS) solar cells with different window-layer materials by nm-resolution electrical potential/field profiling across the junction using Kelvin probe force microscopy imaging on cross-section of the devices. The results illustrate that the device with a CdS window layer (CdS/CIGS) has a buried homojunction located inside the CIGS absorber with ∼40-nm junction depth, whereas the ZnOS/CIGS devices with and without partial electrolyte treatment prior to the window-layer deposition are similar, exhibiting a heterointerface junction. This junction location may contribute in part to the highest efficiency of the CdS/CIGS device among the three devices.

Original language	American English
Article number	8494811
Pages (from-to)	308-312
Number of pages	5
Journal	IEEE Journal of Photovoltaics
Volume	9
Issue number	1
DOIs	https://doi.org/10.1109/JPHOTOV.2018.2874039 https://doi.org/10.1109/JPHOTOV.2018.2874039
State	Published - Jan 2019

Bibliographical note

Publisher Copyright:
© 2011-2012 IEEE.

NREL Publication Number

NREL/JA-5K00-70820

Keywords

Cu(In
electrical potential/field
Ga)Se (CIGS)
Kelvin probe force microscopy (KPFM)
pn junction location
thinfilm solar cell
window layer.

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title = "Effect of Window-Layer Materials on p-n Junction Location in Cu(In,Ga)Se2 Solar Cells",

abstract = "We report on measurements of junction location in Cu(In,Ga)Se2 (CIGS) solar cells with different window-layer materials by nm-resolution electrical potential/field profiling across the junction using Kelvin probe force microscopy imaging on cross-section of the devices. The results illustrate that the device with a CdS window layer (CdS/CIGS) has a buried homojunction located inside the CIGS absorber with ∼40-nm junction depth, whereas the ZnOS/CIGS devices with and without partial electrolyte treatment prior to the window-layer deposition are similar, exhibiting a heterointerface junction. This junction location may contribute in part to the highest efficiency of the CdS/CIGS device among the three devices.",

keywords = "Cu(In, electrical potential/field, Ga)Se (CIGS), Kelvin probe force microscopy (KPFM), pn junction location, thinfilm solar cell, window layer.",

author = "Jiang, {Chun Sheng} and Lorelle Mansfield and Stephen Glynn and Chuanxiao Xiao and Steven Christensen and Mowafak Al-Jassim and Rebekah Garris",

note = "Publisher Copyright: {\textcopyright} 2011-2012 IEEE.",

year = "2019",

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doi = "10.1109/JPHOTOV.2018.2874039",

language = "American English",

volume = "9",

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AU - Jiang, Chun Sheng

AU - Mansfield, Lorelle

AU - Glynn, Stephen

AU - Xiao, Chuanxiao

AU - Christensen, Steven

AU - Al-Jassim, Mowafak

AU - Garris, Rebekah

PY - 2019/1

Y1 - 2019/1

N2 - We report on measurements of junction location in Cu(In,Ga)Se2 (CIGS) solar cells with different window-layer materials by nm-resolution electrical potential/field profiling across the junction using Kelvin probe force microscopy imaging on cross-section of the devices. The results illustrate that the device with a CdS window layer (CdS/CIGS) has a buried homojunction located inside the CIGS absorber with ∼40-nm junction depth, whereas the ZnOS/CIGS devices with and without partial electrolyte treatment prior to the window-layer deposition are similar, exhibiting a heterointerface junction. This junction location may contribute in part to the highest efficiency of the CdS/CIGS device among the three devices.

AB - We report on measurements of junction location in Cu(In,Ga)Se2 (CIGS) solar cells with different window-layer materials by nm-resolution electrical potential/field profiling across the junction using Kelvin probe force microscopy imaging on cross-section of the devices. The results illustrate that the device with a CdS window layer (CdS/CIGS) has a buried homojunction located inside the CIGS absorber with ∼40-nm junction depth, whereas the ZnOS/CIGS devices with and without partial electrolyte treatment prior to the window-layer deposition are similar, exhibiting a heterointerface junction. This junction location may contribute in part to the highest efficiency of the CdS/CIGS device among the three devices.

KW - Cu(In

KW - electrical potential/field

KW - Ga)Se (CIGS)

KW - Kelvin probe force microscopy (KPFM)

KW - pn junction location

KW - thinfilm solar cell

KW - window layer.

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JO - IEEE Journal of Photovoltaics

JF - IEEE Journal of Photovoltaics

IS - 1

M1 - 8494811

ER -

Effect of Window-Layer Materials on p-n Junction Location in Cu(In,Ga)Se2 Solar Cells

Abstract

Bibliographical note

NREL Publication Number

Keywords

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