Effect of Window-Layer Materials on p-n Junction Location in Cu(In,Ga)Se2 Solar Cells

Chun Sheng Jiang, Lorelle Mansfield, Stephen Glynn, Chuanxiao Xiao, Steven Christensen, Mowafak Al-Jassim, Rebekah Garris

Research output: Contribution to journalArticlepeer-review

7 Scopus Citations

Abstract

We report on measurements of junction location in Cu(In,Ga)Se2 (CIGS) solar cells with different window-layer materials by nm-resolution electrical potential/field profiling across the junction using Kelvin probe force microscopy imaging on cross-section of the devices. The results illustrate that the device with a CdS window layer (CdS/CIGS) has a buried homojunction located inside the CIGS absorber with ∼40-nm junction depth, whereas the ZnOS/CIGS devices with and without partial electrolyte treatment prior to the window-layer deposition are similar, exhibiting a heterointerface junction. This junction location may contribute in part to the highest efficiency of the CdS/CIGS device among the three devices.

Original languageAmerican English
Article number8494811
Pages (from-to)308-312
Number of pages5
JournalIEEE Journal of Photovoltaics
Volume9
Issue number1
DOIs
StatePublished - Jan 2019

Bibliographical note

Publisher Copyright:
© 2011-2012 IEEE.

NREL Publication Number

  • NREL/JA-5K00-70820

Keywords

  • Cu(In
  • electrical potential/field
  • Ga)Se (CIGS)
  • Kelvin probe force microscopy (KPFM)
  • pn junction location
  • thinfilm solar cell
  • window layer.

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