Effect of ZnSe/GaAs Interface Treatment in ZnSe Quality Control for Optoelectronic Device Applications

Kwangwook Park, Daniel Beaton, Kenneth X. Steirer, Kirstin Alberi

Research output: Contribution to journalArticlepeer-review

7 Scopus Citations

Abstract

We investigate the role of interface initiation conditions on the growth of ZnSe/GaAs heterovalent heterostructures. ZnSe epilayers were grown on a GaAs surface with various degrees of As-termination and the application of either a Zn or Se pre-treatment. Structural analysis revealed that Zn pre-treatment of an As-rich GaAs surface suppresses Ga 2 Se 3 formation at the interface and promotes the growth of high crystal quality ZnSe. This is confirmed with low-temperature photoluminescence. However, moderation of Ga-Se bonding through a Se pre-treatment of an As-rich GaAs surface can prevent excessive intermixing at the interface and promote excitonic emission in the underlying GaAs layer. These results provide guidance on how best to prepare heterovalent interfaces for various applications.

Original languageAmerican English
Pages (from-to)247-254
Number of pages8
JournalApplied Surface Science
Volume405
DOIs
StatePublished - 2017

Bibliographical note

Publisher Copyright:
© 2017 Elsevier B.V.

NREL Publication Number

  • NREL/JA-5K00-67838

Keywords

  • Heterovalent interfaces
  • II-VI/III-V
  • Molecular beam epitaxy
  • Photoluminescence
  • X-ray photoelectron spectroscopy

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