Effect of ZnSe/GaAs Interface Treatment in ZnSe Quality Control for Optoelectronic Device Applications

Kwangwook Park; Daniel Beaton; Kenneth X. Steirer; Kirstin Alberi

doi:10.1016/j.apsusc.2017.01.265

Effect of ZnSe/GaAs Interface Treatment in ZnSe Quality Control for Optoelectronic Device Applications

Kwangwook Park, Daniel Beaton, Kenneth X. Steirer, Kirstin Alberi

Materials Science

Research output: Contribution to journal › Article › peer-review

8 Scopus Citations

Abstract

We investigate the role of interface initiation conditions on the growth of ZnSe/GaAs heterovalent heterostructures. ZnSe epilayers were grown on a GaAs surface with various degrees of As-termination and the application of either a Zn or Se pre-treatment. Structural analysis revealed that Zn pre-treatment of an As-rich GaAs surface suppresses Ga ₂ Se ₃ formation at the interface and promotes the growth of high crystal quality ZnSe. This is confirmed with low-temperature photoluminescence. However, moderation of Ga-Se bonding through a Se pre-treatment of an As-rich GaAs surface can prevent excessive intermixing at the interface and promote excitonic emission in the underlying GaAs layer. These results provide guidance on how best to prepare heterovalent interfaces for various applications.

Original language	American English
Pages (from-to)	247-254
Number of pages	8
Journal	Applied Surface Science
Volume	405
DOIs	https://doi.org/10.1016/j.apsusc.2017.01.265 https://doi.org/10.1016/j.apsusc.2017.01.265
State	Published - 2017

Bibliographical note

Publisher Copyright:
© 2017 Elsevier B.V.

NREL Publication Number

NREL/JA-5K00-67838

Keywords

Heterovalent interfaces
II-VI/III-V
Molecular beam epitaxy
Photoluminescence
X-ray photoelectron spectroscopy

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@article{f97478f37a6d41a1accb304d808cbd15,

title = "Effect of ZnSe/GaAs Interface Treatment in ZnSe Quality Control for Optoelectronic Device Applications",

abstract = " We investigate the role of interface initiation conditions on the growth of ZnSe/GaAs heterovalent heterostructures. ZnSe epilayers were grown on a GaAs surface with various degrees of As-termination and the application of either a Zn or Se pre-treatment. Structural analysis revealed that Zn pre-treatment of an As-rich GaAs surface suppresses Ga 2 Se 3 formation at the interface and promotes the growth of high crystal quality ZnSe. This is confirmed with low-temperature photoluminescence. However, moderation of Ga-Se bonding through a Se pre-treatment of an As-rich GaAs surface can prevent excessive intermixing at the interface and promote excitonic emission in the underlying GaAs layer. These results provide guidance on how best to prepare heterovalent interfaces for various applications.",

keywords = "Heterovalent interfaces, II-VI/III-V, Molecular beam epitaxy, Photoluminescence, X-ray photoelectron spectroscopy",

author = "Kwangwook Park and Daniel Beaton and Steirer, {Kenneth X.} and Kirstin Alberi",

note = "Publisher Copyright: {\textcopyright} 2017 Elsevier B.V.",

year = "2017",

doi = "10.1016/j.apsusc.2017.01.265",

language = "American English",

volume = "405",

pages = "247--254",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Effect of ZnSe/GaAs Interface Treatment in ZnSe Quality Control for Optoelectronic Device Applications

AU - Park, Kwangwook

AU - Beaton, Daniel

AU - Steirer, Kenneth X.

AU - Alberi, Kirstin

PY - 2017

Y1 - 2017

N2 - We investigate the role of interface initiation conditions on the growth of ZnSe/GaAs heterovalent heterostructures. ZnSe epilayers were grown on a GaAs surface with various degrees of As-termination and the application of either a Zn or Se pre-treatment. Structural analysis revealed that Zn pre-treatment of an As-rich GaAs surface suppresses Ga 2 Se 3 formation at the interface and promotes the growth of high crystal quality ZnSe. This is confirmed with low-temperature photoluminescence. However, moderation of Ga-Se bonding through a Se pre-treatment of an As-rich GaAs surface can prevent excessive intermixing at the interface and promote excitonic emission in the underlying GaAs layer. These results provide guidance on how best to prepare heterovalent interfaces for various applications.

AB - We investigate the role of interface initiation conditions on the growth of ZnSe/GaAs heterovalent heterostructures. ZnSe epilayers were grown on a GaAs surface with various degrees of As-termination and the application of either a Zn or Se pre-treatment. Structural analysis revealed that Zn pre-treatment of an As-rich GaAs surface suppresses Ga 2 Se 3 formation at the interface and promotes the growth of high crystal quality ZnSe. This is confirmed with low-temperature photoluminescence. However, moderation of Ga-Se bonding through a Se pre-treatment of an As-rich GaAs surface can prevent excessive intermixing at the interface and promote excitonic emission in the underlying GaAs layer. These results provide guidance on how best to prepare heterovalent interfaces for various applications.

KW - Heterovalent interfaces

KW - II-VI/III-V

KW - Molecular beam epitaxy

KW - Photoluminescence

KW - X-ray photoelectron spectroscopy

UR - http://www.scopus.com/inward/record.url?scp=85013054089&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2017.01.265

DO - 10.1016/j.apsusc.2017.01.265

M3 - Article

AN - SCOPUS:85013054089

SN - 0169-4332

VL - 405

SP - 247

EP - 254

JO - Applied Surface Science

JF - Applied Surface Science

ER -

Effect of ZnSe/GaAs Interface Treatment in ZnSe Quality Control for Optoelectronic Device Applications

Abstract

Bibliographical note

NREL Publication Number

Keywords

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