Effective Interfaces in Silicon Heterojunction Solar Cells

T. H. Wang; E. Iwaniczko; M. R. Page; D. H. Levi; Y. Yan; V. Yelundur; H. M. Branz; A. Rohatgi; Q. Wang

Effective Interfaces in Silicon Heterojunction Solar Cells

T. H. Wang, E. Iwaniczko, M. R. Page, D. H. Levi, Y. Yan, V. Yelundur, H. M. Branz, A. Rohatgi, Q. Wang

Chemistry and Nanoscience

Research output: Contribution to conference › Paper › peer-review

43 Scopus Citations

Abstract

Thin hydrogenated amorphous silicon (a-Si:H) layers deposited by hot-wire chemical vapor deposition (HWCVD) are investigated for use in silicon heterojunction (SHJ) solar cells on p-type crystalline silicon wafers. A requirement for excellent emitter quality is minimization of interface recombination. Best results necessitate immediate a-Si:H deposition and an abrupt and flat interface to the c-Si substrate. We obtain a record planar HJ efficiency of 16.9% with a high V_oc of 652 mV on p-type float-zone (FZ) silicon substrates with HWCVD a-Si:H(n) emitters and screen-printed AI-BSF contacts. H pretreatment by HWCVD is beneficial when limited to a very short period prior to emitter deposition.

Original language	American English
Pages	955-958
Number of pages	4
State	Published - 2005
Event	31st IEEE Photovoltaic Specialists Conference - 2005 - Lake Buena Vista, FL, United States Duration: 3 Jan 2005 → 7 Jan 2005

Conference

Conference	31st IEEE Photovoltaic Specialists Conference - 2005
Country/Territory	United States
City	Lake Buena Vista, FL
Period	3/01/05 → 7/01/05

Bibliographical note

For preprint version see NREL/CP-520-37457

NREL Publication Number

NREL/CP-520-38896

Cite this

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title = "Effective Interfaces in Silicon Heterojunction Solar Cells",

abstract = "Thin hydrogenated amorphous silicon (a-Si:H) layers deposited by hot-wire chemical vapor deposition (HWCVD) are investigated for use in silicon heterojunction (SHJ) solar cells on p-type crystalline silicon wafers. A requirement for excellent emitter quality is minimization of interface recombination. Best results necessitate immediate a-Si:H deposition and an abrupt and flat interface to the c-Si substrate. We obtain a record planar HJ efficiency of 16.9% with a high Voc of 652 mV on p-type float-zone (FZ) silicon substrates with HWCVD a-Si:H(n) emitters and screen-printed AI-BSF contacts. H pretreatment by HWCVD is beneficial when limited to a very short period prior to emitter deposition.",

author = "Wang, {T. H.} and E. Iwaniczko and Page, {M. R.} and Levi, {D. H.} and Y. Yan and V. Yelundur and Branz, {H. M.} and A. Rohatgi and Q. Wang",

note = "For preprint version see NREL/CP-520-37457; 31st IEEE Photovoltaic Specialists Conference - 2005 ; Conference date: 03-01-2005 Through 07-01-2005",

year = "2005",

language = "American English",

pages = "955--958",

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TY - CONF

T1 - Effective Interfaces in Silicon Heterojunction Solar Cells

AU - Wang, T. H.

AU - Iwaniczko, E.

AU - Page, M. R.

AU - Levi, D. H.

AU - Yan, Y.

AU - Yelundur, V.

AU - Branz, H. M.

AU - Rohatgi, A.

AU - Wang, Q.

N1 - For preprint version see NREL/CP-520-37457

PY - 2005

Y1 - 2005

N2 - Thin hydrogenated amorphous silicon (a-Si:H) layers deposited by hot-wire chemical vapor deposition (HWCVD) are investigated for use in silicon heterojunction (SHJ) solar cells on p-type crystalline silicon wafers. A requirement for excellent emitter quality is minimization of interface recombination. Best results necessitate immediate a-Si:H deposition and an abrupt and flat interface to the c-Si substrate. We obtain a record planar HJ efficiency of 16.9% with a high Voc of 652 mV on p-type float-zone (FZ) silicon substrates with HWCVD a-Si:H(n) emitters and screen-printed AI-BSF contacts. H pretreatment by HWCVD is beneficial when limited to a very short period prior to emitter deposition.

AB - Thin hydrogenated amorphous silicon (a-Si:H) layers deposited by hot-wire chemical vapor deposition (HWCVD) are investigated for use in silicon heterojunction (SHJ) solar cells on p-type crystalline silicon wafers. A requirement for excellent emitter quality is minimization of interface recombination. Best results necessitate immediate a-Si:H deposition and an abrupt and flat interface to the c-Si substrate. We obtain a record planar HJ efficiency of 16.9% with a high Voc of 652 mV on p-type float-zone (FZ) silicon substrates with HWCVD a-Si:H(n) emitters and screen-printed AI-BSF contacts. H pretreatment by HWCVD is beneficial when limited to a very short period prior to emitter deposition.

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M3 - Paper

AN - SCOPUS:27944468762

SP - 955

EP - 958

T2 - 31st IEEE Photovoltaic Specialists Conference - 2005

Y2 - 3 January 2005 through 7 January 2005

ER -

Effective Interfaces in Silicon Heterojunction Solar Cells

Abstract

Conference

Bibliographical note

NREL Publication Number

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