Effective Interfaces in Silicon Heterojunction Solar Cells

T. H. Wang; E. Iwaniczko; M. R. Page; D. H. Levi; Y. Yan; V. Yelundur; H. M. Branz; A. Rohatgi; Q. Wang

Effective Interfaces in Silicon Heterojunction Solar Cells

T. H. Wang
, E. Iwaniczko
, M. R. Page
, D. H. Levi
, Y. Yan
, V. Yelundur
, H. M. Branz
, A. Rohatgi
, Q. Wang

Chemistry and Nanoscience

Research output: Contribution to conference › Paper › peer-review

43 Scopus Citations

Abstract

Thin hydrogenated amorphous silicon (a-Si:H) layers deposited by hot-wire chemical vapor deposition (HWCVD) are investigated for use in silicon heterojunction (SHJ) solar cells on p-type crystalline silicon wafers. A requirement for excellent emitter quality is minimization of interface recombination. Best results necessitate immediate a-Si:H deposition and an abrupt and flat interface to the c-Si substrate. We obtain a record planar HJ efficiency of 16.9% with a high V_oc of 652 mV on p-type float-zone (FZ) silicon substrates with HWCVD a-Si:H(n) emitters and screen-printed AI-BSF contacts. H pretreatment by HWCVD is beneficial when limited to a very short period prior to emitter deposition.

Original language	American English
Pages	955-958
Number of pages	4
State	Published - 2005
Event	31st IEEE Photovoltaic Specialists Conference - 2005 - Lake Buena Vista, FL, United States Duration: 3 Jan 2005 → 7 Jan 2005

Conference

Conference	31st IEEE Photovoltaic Specialists Conference - 2005
Country/Territory	United States
City	Lake Buena Vista, FL
Period	3/01/05 → 7/01/05

Bibliographical note

For preprint version see NREL/CP-520-37457

NLR Publication Number

NREL/CP-520-38896

Cite this

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title = "Effective Interfaces in Silicon Heterojunction Solar Cells",

abstract = "Thin hydrogenated amorphous silicon (a-Si:H) layers deposited by hot-wire chemical vapor deposition (HWCVD) are investigated for use in silicon heterojunction (SHJ) solar cells on p-type crystalline silicon wafers. A requirement for excellent emitter quality is minimization of interface recombination. Best results necessitate immediate a-Si:H deposition and an abrupt and flat interface to the c-Si substrate. We obtain a record planar HJ efficiency of 16.9\% with a high Voc of 652 mV on p-type float-zone (FZ) silicon substrates with HWCVD a-Si:H(n) emitters and screen-printed AI-BSF contacts. H pretreatment by HWCVD is beneficial when limited to a very short period prior to emitter deposition.",

author = "Wang, \{T. H.\} and E. Iwaniczko and Page, \{M. R.\} and Levi, \{D. H.\} and Y. Yan and V. Yelundur and Branz, \{H. M.\} and A. Rohatgi and Q. Wang",

note = "For preprint version see NREL/CP-520-37457; 31st IEEE Photovoltaic Specialists Conference - 2005 ; Conference date: 03-01-2005 Through 07-01-2005",

year = "2005",

language = "American English",

pages = "955--958",

}

TY - CONF

T1 - Effective Interfaces in Silicon Heterojunction Solar Cells

AU - Wang, T. H.

AU - Iwaniczko, E.

AU - Page, M. R.

AU - Levi, D. H.

AU - Yan, Y.

AU - Yelundur, V.

AU - Branz, H. M.

AU - Rohatgi, A.

AU - Wang, Q.

N1 - For preprint version see NREL/CP-520-37457

PY - 2005

Y1 - 2005

N2 - Thin hydrogenated amorphous silicon (a-Si:H) layers deposited by hot-wire chemical vapor deposition (HWCVD) are investigated for use in silicon heterojunction (SHJ) solar cells on p-type crystalline silicon wafers. A requirement for excellent emitter quality is minimization of interface recombination. Best results necessitate immediate a-Si:H deposition and an abrupt and flat interface to the c-Si substrate. We obtain a record planar HJ efficiency of 16.9% with a high Voc of 652 mV on p-type float-zone (FZ) silicon substrates with HWCVD a-Si:H(n) emitters and screen-printed AI-BSF contacts. H pretreatment by HWCVD is beneficial when limited to a very short period prior to emitter deposition.

AB - Thin hydrogenated amorphous silicon (a-Si:H) layers deposited by hot-wire chemical vapor deposition (HWCVD) are investigated for use in silicon heterojunction (SHJ) solar cells on p-type crystalline silicon wafers. A requirement for excellent emitter quality is minimization of interface recombination. Best results necessitate immediate a-Si:H deposition and an abrupt and flat interface to the c-Si substrate. We obtain a record planar HJ efficiency of 16.9% with a high Voc of 652 mV on p-type float-zone (FZ) silicon substrates with HWCVD a-Si:H(n) emitters and screen-printed AI-BSF contacts. H pretreatment by HWCVD is beneficial when limited to a very short period prior to emitter deposition.

UR - https://www.scopus.com/pages/publications/27944468762

M3 - Paper

AN - SCOPUS:27944468762

SP - 955

EP - 958

T2 - 31st IEEE Photovoltaic Specialists Conference - 2005

Y2 - 3 January 2005 through 7 January 2005

ER -

Effective Interfaces in Silicon Heterojunction Solar Cells

Abstract

Conference

Bibliographical note

NLR Publication Number

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