Abstract
Reactive radio-frequency magnetron sputtering of a zinc metal target was used to prepare nitrogen doped zinc oxide thin films. To fabricate a variety of nitrogen doped zinc oxide films, the oxygen partial pressure in the sputtering gas was systematically varied. X-ray photoelectron and Raman spectroscopy analyses have revealed that effective nitrogen doping in zinc oxide films can only be achieved by utilizing a low oxygen partial pressure in the sputtering gas and these results are discussed in detail.
| Original language | American English |
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| Pages | 312-319 |
| Number of pages | 8 |
| State | Published - 2004 |
| Event | State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia - Honolulu, HI, United States Duration: 3 Oct 2004 → 8 Oct 2004 |
Conference
| Conference | State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia |
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| Country/Territory | United States |
| City | Honolulu, HI |
| Period | 3/10/04 → 8/10/04 |
NREL Publication Number
- NREL/CP-590-38920