Effects of Back-Contacting Method and Temperature on CdTe/CdS Solar Cells

Joel N. Duenow; Ramesh G. Dhere; Jian V. Li; Matthew R. Young; Timothy A. Gessert

doi:10.1109/PVSC.2010.5614593

Effects of Back-Contacting Method and Temperature on CdTe/CdS Solar Cells

Joel N. Duenow, Ramesh G. Dhere, Jian V. Li, Matthew R. Young, Timothy A. Gessert

National Renewable Energy Laboratory

Research output: Contribution to conference › Paper › peer-review

18 Scopus Citations

Abstract

In this study, we use three common types of back contacts to CdTe-a ZnTe:Cu back-contact interface layer, a Cu/Au bilayer, and HgTe:Cu-doped graphite paste-to enable us to gain greater understanding of how back-contact processing affects the entire CdTe/CdS device. Current density-voltage (J-V) and quantum efficiency (QE) measurements are used to examine device performance and carrier collection. Variations in the CdTe net acceptor density are examined using capacitance-voltage (C-V) measurements. Temperature-dependent current density-voltage (JVT) characterization is used to investigate the back-contact barrier height. These methods enhance our understanding of contacts to CdTe and the effects of these contacts on CdTe photovoltaic devices.

Original language	American English
Pages	1001-1005
Number of pages	5
DOIs	https://doi.org/10.1109/PVSC.2010.5614593 https://doi.org/10.1109/PVSC.2010.5614593
State	Published - 2010
Event	35th IEEE Photovoltaic Specialists Conference, PVSC 2010 - Honolulu, HI, United States Duration: 20 Jun 2010 → 25 Jun 2010

Conference

Conference	35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Country/Territory	United States
City	Honolulu, HI
Period	20/06/10 → 25/06/10

NREL Publication Number

NREL/CP-520-47752

Keywords

back-contact processing
device performance

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abstract = "In this study, we use three common types of back contacts to CdTe-a ZnTe:Cu back-contact interface layer, a Cu/Au bilayer, and HgTe:Cu-doped graphite paste-to enable us to gain greater understanding of how back-contact processing affects the entire CdTe/CdS device. Current density-voltage (J-V) and quantum efficiency (QE) measurements are used to examine device performance and carrier collection. Variations in the CdTe net acceptor density are examined using capacitance-voltage (C-V) measurements. Temperature-dependent current density-voltage (JVT) characterization is used to investigate the back-contact barrier height. These methods enhance our understanding of contacts to CdTe and the effects of these contacts on CdTe photovoltaic devices.",

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doi = "10.1109/PVSC.2010.5614593",

language = "American English",

pages = "1001--1005",

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T1 - Effects of Back-Contacting Method and Temperature on CdTe/CdS Solar Cells

AU - Duenow, Joel N.

AU - Dhere, Ramesh G.

AU - Li, Jian V.

AU - Young, Matthew R.

AU - Gessert, Timothy A.

PY - 2010

Y1 - 2010

N2 - In this study, we use three common types of back contacts to CdTe-a ZnTe:Cu back-contact interface layer, a Cu/Au bilayer, and HgTe:Cu-doped graphite paste-to enable us to gain greater understanding of how back-contact processing affects the entire CdTe/CdS device. Current density-voltage (J-V) and quantum efficiency (QE) measurements are used to examine device performance and carrier collection. Variations in the CdTe net acceptor density are examined using capacitance-voltage (C-V) measurements. Temperature-dependent current density-voltage (JVT) characterization is used to investigate the back-contact barrier height. These methods enhance our understanding of contacts to CdTe and the effects of these contacts on CdTe photovoltaic devices.

AB - In this study, we use three common types of back contacts to CdTe-a ZnTe:Cu back-contact interface layer, a Cu/Au bilayer, and HgTe:Cu-doped graphite paste-to enable us to gain greater understanding of how back-contact processing affects the entire CdTe/CdS device. Current density-voltage (J-V) and quantum efficiency (QE) measurements are used to examine device performance and carrier collection. Variations in the CdTe net acceptor density are examined using capacitance-voltage (C-V) measurements. Temperature-dependent current density-voltage (JVT) characterization is used to investigate the back-contact barrier height. These methods enhance our understanding of contacts to CdTe and the effects of these contacts on CdTe photovoltaic devices.

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KW - device performance

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Effects of Back-Contacting Method and Temperature on CdTe/CdS Solar Cells

Abstract

Conference

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Keywords

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