Effects of Band Bending on the Electrical and Photo-Electronic Properties of a-Si:H and a-Ge:H Thin Films in Surface Cell Structures

Effects of Band Bending on the Electrical and Photo-Electronic Properties of a-Si:H and a-Ge:H Thin Films in Surface Cell Structures

Research output: Contribution to conference › Paper

Original language	American English
Pages	149-158
Number of pages	10
State	Published - 1987
Event	1987 Amorphous Silicon Subcontractors' Review Meeting - Palo Alto, California Duration: 26 Jan 1987 → 27 Jan 1987

Conference

Conference	1987 Amorphous Silicon Subcontractors' Review Meeting
City	Palo Alto, California
Period	26/01/87 → 27/01/87

Bibliographical note

Work performed by Department of Physics, North Carolina State University, Raleigh, North Carolina and Hitachi Central Research Laboratory, Tokyo, Japan

NREL Publication Number

ACNR/CP-8746

Cite this

@conference{e11098dc1fe24ceb959d5d2446fb46eb,

title = "Effects of Band Bending on the Electrical and Photo-Electronic Properties of a-Si:H and a-Ge:H Thin Films in Surface Cell Structures",

author = "NREL",

note = "Work performed by Department of Physics, North Carolina State University, Raleigh, North Carolina and Hitachi Central Research Laboratory, Tokyo, Japan; 1987 Amorphous Silicon Subcontractors' Review Meeting ; Conference date: 26-01-1987 Through 27-01-1987",

year = "1987",

language = "American English",

pages = "149--158",

}

TY - CONF

T1 - Effects of Band Bending on the Electrical and Photo-Electronic Properties of a-Si:H and a-Ge:H Thin Films in Surface Cell Structures

AU - NREL, null

N1 - Work performed by Department of Physics, North Carolina State University, Raleigh, North Carolina and Hitachi Central Research Laboratory, Tokyo, Japan

PY - 1987

Y1 - 1987

M3 - Paper

SP - 149

EP - 158

T2 - 1987 Amorphous Silicon Subcontractors' Review Meeting

Y2 - 26 January 1987 through 27 January 1987

ER -