Effects of Buffer Layer Processing on CIGs Excess Carrier Lifetime: Application of Dual-Beam Optical Modulation to Process Analysis

    Research output: Contribution to conferencePaper

    Abstract

    A new nondestructive contactless Dual-Beam Optical Modulation (DBOM) technique has been developed for the characterization of effective excess carrier lifetimes in CIS films. Developed originally for lifetime measurement of SOI wafers, the technique represents a novel tool with the capabilities of direct measurement of the lifetime effects of intermediate processing steps during devicefabrication without the confounding effects that subsequent processes might have on the final device characteristics. This is demonstrated in a controlled experiment intended to elucidate the mechanisms whereby CBD CdS processes improve device performance and to compare the CBD process with an MOCVD dry process. Areal mapping of excess carrier lifetimes across the samples is used to exhibit thesubstantial inhomogeneity of lifetime even within very high quality sample, demonstrating another capability of DBOM applicable to quality assessment and process optimization.
    Original languageAmerican English
    Pages821-824
    Number of pages4
    DOIs
    StatePublished - 1996
    EventTwenty Fifth IEEE Photovoltaic Specialists Conference - Washington, D.C.
    Duration: 13 May 199617 May 1996

    Conference

    ConferenceTwenty Fifth IEEE Photovoltaic Specialists Conference
    CityWashington, D.C.
    Period13/05/9617/05/96

    Bibliographical note

    Work performed by the University of Florida, Gainesville, Florida

    NREL Publication Number

    • NREL/CP-22409

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