Abstract
A new nondestructive contactless Dual-Beam Optical Modulation (DBOM) technique has been developed for the characterization of effective excess carrier lifetimes in CIS films. Developed originally for lifetime measurement of SOI wafers, the technique represents a novel tool with the capabilities of direct measurement of the lifetime effects of intermediate processing steps during devicefabrication without the confounding effects that subsequent processes might have on the final device characteristics. This is demonstrated in a controlled experiment intended to elucidate the mechanisms whereby CBD CdS processes improve device performance and to compare the CBD process with an MOCVD dry process. Areal mapping of excess carrier lifetimes across the samples is used to exhibit thesubstantial inhomogeneity of lifetime even within very high quality sample, demonstrating another capability of DBOM applicable to quality assessment and process optimization.
Original language | American English |
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Pages | 821-824 |
Number of pages | 4 |
DOIs | |
State | Published - 1996 |
Event | Twenty Fifth IEEE Photovoltaic Specialists Conference - Washington, D.C. Duration: 13 May 1996 → 17 May 1996 |
Conference
Conference | Twenty Fifth IEEE Photovoltaic Specialists Conference |
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City | Washington, D.C. |
Period | 13/05/96 → 17/05/96 |
Bibliographical note
Work performed by the University of Florida, Gainesville, FloridaNREL Publication Number
- NREL/CP-22409