Effects of Carbon Grading at the p/i Interface of the Open Circuit Voltage of p-i-n and n-i-p Amorphous Silicon Solar Cells

Effects of Carbon Grading at the p/i Interface of the Open Circuit Voltage of p-i-n and n-i-p Amorphous Silicon Solar Cells

Research output: Contribution to conference › Paper

Original language	American English
Pages	545-548
Number of pages	4
State	Published - 1987
Event	MRS Spring Meeting - Anaheim, California Duration: 21 Apr 1987 → 24 Apr 1987

Conference

Conference	MRS Spring Meeting
City	Anaheim, California
Period	21/04/87 → 24/04/87

Bibliographical note

Work performed by Electronic and Information Sector Laboratories, 3M Company, St. Paul, Minnesota

NREL Publication Number

ACNR/CP-10022

Cite this

@conference{575103d23b93471589e081220f3fbaba,

title = "Effects of Carbon Grading at the p/i Interface of the Open Circuit Voltage of p-i-n and n-i-p Amorphous Silicon Solar Cells",

author = "NREL",

note = "Work performed by Electronic and Information Sector Laboratories, 3M Company, St. Paul, Minnesota; MRS Spring Meeting ; Conference date: 21-04-1987 Through 24-04-1987",

year = "1987",

language = "American English",

pages = "545--548",

}

TY - CONF

T1 - Effects of Carbon Grading at the p/i Interface of the Open Circuit Voltage of p-i-n and n-i-p Amorphous Silicon Solar Cells

AU - NREL, null

N1 - Work performed by Electronic and Information Sector Laboratories, 3M Company, St. Paul, Minnesota

PY - 1987

Y1 - 1987

M3 - Paper

SP - 545

EP - 548

T2 - MRS Spring Meeting

Y2 - 21 April 1987 through 24 April 1987

ER -