Effects of Carrier Transport on the Photoluminescence of Degenerate Electron-Hole Plasma in GaAs Epilayers

doi:10.1016/S0169-4332(96)00413-8

Effects of Carrier Transport on the Photoluminescence of Degenerate Electron-Hole Plasma in GaAs Epilayers

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Abstract

Time resolved photoluminescence (TRPL) is employed to study photogenerated elctron-hole plasma expansion under strong illumination conditions in thin GaAs epilayer. We have observed spectral dependencies similar to ones which are usually observed on carrier's cooling. However, in our case they are caused by the diffusion of the degenerate electron-hole plasma perpendicular to the crystal surface.We have studied the influence of the degenerated carrier transport on the luminescence characteristics of bulk samples, both experimentally and by simulations. We suggest using this method to measure the transport coefficients of both degenerate and hot excess carriers in semiconductor structures.

Original language	American English
Pages (from-to)	457-465
Number of pages	9
Journal	Applied Surface Science
Volume	106
DOIs	https://doi.org/10.1016/S0169-4332(96)00413-8
State	Published - 1996

NREL Publication Number

NREL/JA-450-23058

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10.1016/S0169-4332(96)00413-8

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title = "Effects of Carrier Transport on the Photoluminescence of Degenerate Electron-Hole Plasma in GaAs Epilayers",

abstract = "Time resolved photoluminescence (TRPL) is employed to study photogenerated elctron-hole plasma expansion under strong illumination conditions in thin GaAs epilayer. We have observed spectral dependencies similar to ones which are usually observed on carrier's cooling. However, in our case they are caused by the diffusion of the degenerate electron-hole plasma perpendicular to the crystal surface.We have studied the influence of the degenerated carrier transport on the luminescence characteristics of bulk samples, both experimentally and by simulations. We suggest using this method to measure the transport coefficients of both degenerate and hot excess carriers in semiconductor structures.",

author = "NREL",

year = "1996",

doi = "10.1016/S0169-4332(96)00413-8",

language = "American English",

volume = "106",

pages = "457--465",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

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TY - JOUR

T1 - Effects of Carrier Transport on the Photoluminescence of Degenerate Electron-Hole Plasma in GaAs Epilayers

AU - NREL, null

PY - 1996

Y1 - 1996

N2 - Time resolved photoluminescence (TRPL) is employed to study photogenerated elctron-hole plasma expansion under strong illumination conditions in thin GaAs epilayer. We have observed spectral dependencies similar to ones which are usually observed on carrier's cooling. However, in our case they are caused by the diffusion of the degenerate electron-hole plasma perpendicular to the crystal surface.We have studied the influence of the degenerated carrier transport on the luminescence characteristics of bulk samples, both experimentally and by simulations. We suggest using this method to measure the transport coefficients of both degenerate and hot excess carriers in semiconductor structures.

AB - Time resolved photoluminescence (TRPL) is employed to study photogenerated elctron-hole plasma expansion under strong illumination conditions in thin GaAs epilayer. We have observed spectral dependencies similar to ones which are usually observed on carrier's cooling. However, in our case they are caused by the diffusion of the degenerate electron-hole plasma perpendicular to the crystal surface.We have studied the influence of the degenerated carrier transport on the luminescence characteristics of bulk samples, both experimentally and by simulations. We suggest using this method to measure the transport coefficients of both degenerate and hot excess carriers in semiconductor structures.

U2 - 10.1016/S0169-4332(96)00413-8

DO - 10.1016/S0169-4332(96)00413-8

M3 - Article

SN - 0169-4332

VL - 106

SP - 457

EP - 465

JO - Applied Surface Science

JF - Applied Surface Science

ER -

Effects of Carrier Transport on the Photoluminescence of Degenerate Electron-Hole Plasma in GaAs Epilayers

Abstract

NREL Publication Number

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