Effects of Cu at the Device Junction on the Performance of CdTe/CdS Photovoltaic Cells

T. J. Berniard, D. S. Albin, B. To, J. W. Pankow, M. Young, S. E. Asher

Research output: Contribution to conferencePaperpeer-review

25 Scopus Citations

Abstract

The effects of Cu on the properties of CdTe/CdS photovoltaic cells at the device junctions were discussed. The optical bandgap of CdS films was 2.31 eV having thermal diffusion of 50 Å. The modeled quantum efficiency (QE) curves for CdTe lead to a reduction and shifting of the QE response near 500 nm, as the bandgap of the CdA was shifted to lower energy. The Cu films showed that increasing the amount of Cu in the CdS produces a systematic change in the J-V parameters.

Original languageAmerican English
Pages2423-2428
Number of pages6
DOIs
StatePublished - Sep 2004
EventAmerican Vacuum Society. AVS 50th International Symposium - Baltimore, Maryland
Duration: 2 Nov 20037 Nov 2003

Conference

ConferenceAmerican Vacuum Society. AVS 50th International Symposium
CityBaltimore, Maryland
Period2/11/037/11/03

NREL Publication Number

  • NREL/CP-520-35897

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