Effects of Deposition Termination on Cu2ZnSnSe4 Device Characteristics

I. L. Repins, J. V. Li, A. Kanevce, C. L. Perkins, K. X. Steirer, J. Pankow, G. Teeter, D. Kuciauskas, C. Beall, C. Dehart, J. Carapella, B. Bob, J. S. Park, S. H. Wei

Research output: Contribution to journalArticlepeer-review

29 Scopus Citations


Co-evaporated Cu2ZnSnSe4(CZTSe) is used to examine sensitivities to the device performance that originate from variations in Zn content very near the surface. While integral Zn content of the film is held approximately constant, the surface composition is manipulated via changes to the Zn flux at the end of the deposition. Surface composition, device performance, and open-circuit voltage extrapolated to zero temperature are measured as a function of deposition termination. Origins of the apparent reduction in surface recombination with increasing Zn are discussed.

Original languageAmerican English
Pages (from-to)184-187
Number of pages4
JournalThin Solid Films
StatePublished - 1 May 2015

Bibliographical note

E-MRS 2014 Spring Meeting, Symposium A, Thin-Film Chalcogenide Photovoltaic Materials

NREL Publication Number

  • NREL/JA-5K00-61834


  • Copper zinc tin selenide
  • Copper zinc tin sulfide
  • Hole barrier
  • Kesterite
  • Solar cell
  • Surface
  • Thin films
  • Voltage


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