Effects of Dislocations on Minority Carrier Lifetime in Dislocated Float Zone Silicon

Research output: Contribution to conferencePaper

Abstract

We present a correlation of Microwave Photoconductance Decay minority carrier lifetime with dislocation density in high purity Float Zone silicon. Electron Beam Induced Current (EBIC) images were carefully aligned to lifetime maps and depth profiling of individual defect electrical activity was done by varying the bias of Schottky diodes. The data presented provides a relationship betweenlifetime variations and EBIC contrast, based on dislocation density and impurity decoration in the near surface zone.
Original languageAmerican English
Pages227-230
Number of pages4
StatePublished - 2002
Event12th Workshop on Crystalline Silicon Solar Cell Materials and Processes - Breckenridge, Colorado
Duration: 11 Aug 200214 Aug 2002

Conference

Conference12th Workshop on Crystalline Silicon Solar Cell Materials and Processes
CityBreckenridge, Colorado
Period11/08/0214/08/02

NREL Publication Number

  • NREL/CP-520-35652

Keywords

  • 12th workshop
  • crystalline silicon (x-Si) (c-Si)
  • PV
  • solar cell materials

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