Effects of Dislocations on Minority Carrier Lifetime in Dislocated Float Zone Silicon

Effects of Dislocations on Minority Carrier Lifetime in Dislocated Float Zone Silicon

Research output: Contribution to conference › Paper

Abstract

We present a correlation of Microwave Photoconductance Decay minority carrier lifetime with dislocation density in high purity Float Zone silicon. Electron Beam Induced Current (EBIC) images were carefully aligned to lifetime maps and depth profiling of individual defect electrical activity was done by varying the bias of Schottky diodes. The data presented provides a relationship betweenlifetime variations and EBIC contrast, based on dislocation density and impurity decoration in the near surface zone.

Original language	American English
Pages	227-230
Number of pages	4
State	Published - 2002
Event	12th Workshop on Crystalline Silicon Solar Cell Materials and Processes - Breckenridge, Colorado Duration: 11 Aug 2002 → 14 Aug 2002

Conference

Conference	12th Workshop on Crystalline Silicon Solar Cell Materials and Processes
City	Breckenridge, Colorado
Period	11/08/02 → 14/08/02

NREL Publication Number

NREL/CP-520-35652

Keywords

12th workshop
crystalline silicon (x-Si) (c-Si)
PV
solar cell materials

Access to Document

https://www.nrel.gov/docs/fy02osti/35652.pdf

Cite this

@conference{a34163dbdb9c4ddd8d9ab1555fbba513,

title = "Effects of Dislocations on Minority Carrier Lifetime in Dislocated Float Zone Silicon",

abstract = "We present a correlation of Microwave Photoconductance Decay minority carrier lifetime with dislocation density in high purity Float Zone silicon. Electron Beam Induced Current (EBIC) images were carefully aligned to lifetime maps and depth profiling of individual defect electrical activity was done by varying the bias of Schottky diodes. The data presented provides a relationship betweenlifetime variations and EBIC contrast, based on dislocation density and impurity decoration in the near surface zone.",

keywords = "12th workshop, crystalline silicon (x-Si) (c-Si), PV, solar cell materials",

author = "NREL",

year = "2002",

language = "American English",

pages = "227--230",

note = "12th Workshop on Crystalline Silicon Solar Cell Materials and Processes ; Conference date: 11-08-2002 Through 14-08-2002",

}

TY - CONF

T1 - Effects of Dislocations on Minority Carrier Lifetime in Dislocated Float Zone Silicon

AU - NREL, null

PY - 2002

Y1 - 2002

N2 - We present a correlation of Microwave Photoconductance Decay minority carrier lifetime with dislocation density in high purity Float Zone silicon. Electron Beam Induced Current (EBIC) images were carefully aligned to lifetime maps and depth profiling of individual defect electrical activity was done by varying the bias of Schottky diodes. The data presented provides a relationship betweenlifetime variations and EBIC contrast, based on dislocation density and impurity decoration in the near surface zone.

AB - We present a correlation of Microwave Photoconductance Decay minority carrier lifetime with dislocation density in high purity Float Zone silicon. Electron Beam Induced Current (EBIC) images were carefully aligned to lifetime maps and depth profiling of individual defect electrical activity was done by varying the bias of Schottky diodes. The data presented provides a relationship betweenlifetime variations and EBIC contrast, based on dislocation density and impurity decoration in the near surface zone.

KW - 12th workshop

KW - crystalline silicon (x-Si) (c-Si)

KW - PV

KW - solar cell materials

M3 - Paper

SP - 227

EP - 230

T2 - 12th Workshop on Crystalline Silicon Solar Cell Materials and Processes

Y2 - 11 August 2002 through 14 August 2002

ER -

Effects of Dislocations on Minority Carrier Lifetime in Dislocated Float Zone Silicon

Abstract

Conference

NREL Publication Number

Keywords

Access to Document

Fingerprint

Cite this