Effects of Dopant Profiles on the Device Parameters of p-i-n and n-i-p a-Si Solar Cells

Effects of Dopant Profiles on the Device Parameters of p-i-n and n-i-p a-Si Solar Cells

Research output: Contribution to conference › Paper

Original language	American English
Pages	531-536
Number of pages	6
State	Published - 1986
Event	Materials Research Society Spring Meeting - Palo Alto, California Duration: 15 Apr 1986 → 18 Apr 1986

Conference

Conference	Materials Research Society Spring Meeting
City	Palo Alto, California
Period	15/04/86 → 18/04/86

Bibliographical note

Work performed by E & I Sector Laboratory, Minnesota Mining and Manufacturing Company (3M), St. Paul, Minnesota

NREL Publication Number

ACNR/CP-8313

Cite this

@conference{012ecd7ca78c42ac94c0c98d99ab0a77,

title = "Effects of Dopant Profiles on the Device Parameters of p-i-n and n-i-p a-Si Solar Cells",

author = "NREL",

note = "Work performed by E & I Sector Laboratory, Minnesota Mining and Manufacturing Company (3M), St. Paul, Minnesota; Materials Research Society Spring Meeting ; Conference date: 15-04-1986 Through 18-04-1986",

year = "1986",

language = "American English",

pages = "531--536",

}

TY - CONF

T1 - Effects of Dopant Profiles on the Device Parameters of p-i-n and n-i-p a-Si Solar Cells

AU - NREL, null

N1 - Work performed by E & I Sector Laboratory, Minnesota Mining and Manufacturing Company (3M), St. Paul, Minnesota

PY - 1986

Y1 - 1986

M3 - Paper

SP - 531

EP - 536

T2 - Materials Research Society Spring Meeting

Y2 - 15 April 1986 through 18 April 1986

ER -