Effects of Heavy Impurity Doping on Electron Injection in p+-n GaAs Diodes

    Research output: Contribution to journalArticle

    Original languageAmerican English
    Pages (from-to)2255-2257
    Number of pages3
    JournalApplied Physics Letters
    Issue number26
    StatePublished - 1988

    Bibliographical note

    Work performed by Eastman-Kodak Corporation; School of Electrical Engineering, Purdue University, West Lafayette, Indiana; and Spire Corporation, Bedford, Massachusetts

    NREL Publication Number

    • ACNR/JA-10531

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