Effects of Heavy Impurity Doping on Electron Injection in p+-n GaAs Diodes

doi:10.1063/1.99529

Effects of Heavy Impurity Doping on Electron Injection in p+-n GaAs Diodes

Research output: Contribution to journal › Article

Original language	American English
Pages (from-to)	2255-2257
Number of pages	3
Journal	Applied Physics Letters
Volume	52
Issue number	26
DOIs	https://doi.org/10.1063/1.99529
State	Published - 1988

Bibliographical note

Work performed by Eastman-Kodak Corporation; School of Electrical Engineering, Purdue University, West Lafayette, Indiana; and Spire Corporation, Bedford, Massachusetts

NREL Publication Number

ACNR/JA-10531

Access to Document

10.1063/1.99529

Cite this

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title = "Effects of Heavy Impurity Doping on Electron Injection in p+-n GaAs Diodes",

author = "NREL",

note = "Work performed by Eastman-Kodak Corporation; School of Electrical Engineering, Purdue University, West Lafayette, Indiana; and Spire Corporation, Bedford, Massachusetts",

year = "1988",

doi = "10.1063/1.99529",

language = "American English",

volume = "52",

pages = "2255--2257",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "26",

}

TY - JOUR

T1 - Effects of Heavy Impurity Doping on Electron Injection in p+-n GaAs Diodes

AU - NREL, null

N1 - Work performed by Eastman-Kodak Corporation; School of Electrical Engineering, Purdue University, West Lafayette, Indiana; and Spire Corporation, Bedford, Massachusetts

PY - 1988

Y1 - 1988

U2 - 10.1063/1.99529

DO - 10.1063/1.99529

M3 - Article

SN - 0003-6951

VL - 52

SP - 2255

EP - 2257

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

ER -