Effects of Impurities on Film Quality and Device Performance in a-Si:H Deposited by Photo-Assisted CVD

Effects of Impurities on Film Quality and Device Performance in a-Si:H Deposited by Photo-Assisted CVD

Research output: Contribution to conference › Paper

Original language	American English
Pages	699-704
Number of pages	6
State	Published - 1987
Event	Nineteenth IEEE Photovoltaic Specialists Conference-1987 - New Orleans, Louisiana Duration: 4 May 1987 → 8 May 1987

Conference

Conference	Nineteenth IEEE Photovoltaic Specialists Conference-1987
City	New Orleans, Louisiana
Period	4/05/87 → 8/05/87

Bibliographical note

Work performed by Institute of Energy Conversion, University of Delaware, Newark, Delaware

NREL Publication Number

ACNR/CP-9596

Cite this

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title = "Effects of Impurities on Film Quality and Device Performance in a-Si:H Deposited by Photo-Assisted CVD",

author = "NREL",

note = "Work performed by Institute of Energy Conversion, University of Delaware, Newark, Delaware; Nineteenth IEEE Photovoltaic Specialists Conference-1987 ; Conference date: 04-05-1987 Through 08-05-1987",

year = "1987",

language = "American English",

pages = "699--704",

}

TY - CONF

T1 - Effects of Impurities on Film Quality and Device Performance in a-Si:H Deposited by Photo-Assisted CVD

AU - NREL, null

N1 - Work performed by Institute of Energy Conversion, University of Delaware, Newark, Delaware

PY - 1987

Y1 - 1987

M3 - Paper

SP - 699

EP - 704

T2 - Nineteenth IEEE Photovoltaic Specialists Conference-1987

Y2 - 4 May 1987 through 8 May 1987

ER -