Effects of Incident UV Light on the Surface Morphology of MBE Grown GaAs

Daniel Beaton, Kirstin Alberi, C. Sanders

Research output: Contribution to journalArticlepeer-review

7 Scopus Citations


Light-assisted molecular beam epitaxy is a promising technique for improving the growth of metastable semiconductor alloys traditionally grown at low temperatures. The effect of photon irradiation on adatom incorporation dynamics is studied for GaAs homoepitaxy on vicinal surfaces. Irradiation is found to increase the temperature at which the growth mode transitions from layer-by-layer island nucleation to step flow growth and to alter the surface morphology. These surprising changes are discussed in the context of modification of adatom diffusion and incorporation processes.

Original languageAmerican English
Pages (from-to)76-80
Number of pages5
JournalJournal of Crystal Growth
StatePublished - 2015

Bibliographical note

Publisher Copyright:
© 2015 Published by Elsevier B.V.

NREL Publication Number

  • NREL/JA-5K00-63407


  • A1. Reflection high energy electron diffraction
  • A1. Roughening
  • A1. Surfaces
  • A3. Molecular beam epitaxy
  • B2. Semiconducting gallium arsenide


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