Effects of Light-Soaking in a-Si:H Studied by Photoconductivity Response Time

Effects of Light-Soaking in a-Si:H Studied by Photoconductivity Response Time

Research output: Contribution to conference › Paper

Original language	American English
Pages	195-198
Number of pages	4
State	Published - 1988
Event	MRS Spring Meeting - Reno, Nevada Duration: 5 Apr 1988 → 8 Apr 1988

Conference

Conference	MRS Spring Meeting
City	Reno, Nevada
Period	5/04/88 → 8/04/88

Bibliographical note

Work performed by Institute of Physics, Chinese Academy of Sciences, Beijing, China; Solar Energy Research Institute, Golden, Colorado; and Department of Electrical and Computer Engineering, University of Colorado, Boulder, Colorado

NREL Publication Number

ACNR/CP-212-10494

Cite this

@conference{f8a5da5bf56b4e248126b444cdd8d64e,

title = "Effects of Light-Soaking in a-Si:H Studied by Photoconductivity Response Time",

author = "NREL",

note = "Work performed by Institute of Physics, Chinese Academy of Sciences, Beijing, China; Solar Energy Research Institute, Golden, Colorado; and Department of Electrical and Computer Engineering, University of Colorado, Boulder, Colorado; MRS Spring Meeting ; Conference date: 05-04-1988 Through 08-04-1988",

year = "1988",

language = "American English",

pages = "195--198",

}

TY - CONF

T1 - Effects of Light-Soaking in a-Si:H Studied by Photoconductivity Response Time

AU - NREL, null

N1 - Work performed by Institute of Physics, Chinese Academy of Sciences, Beijing, China; Solar Energy Research Institute, Golden, Colorado; and Department of Electrical and Computer Engineering, University of Colorado, Boulder, Colorado

PY - 1988

Y1 - 1988

M3 - Paper

SP - 195

EP - 198

T2 - MRS Spring Meeting

Y2 - 5 April 1988 through 8 April 1988

ER -