Effects of Low Level Graded I-Layer Doping on the Stability of a-Si:H Solar Cells

Effects of Low Level Graded I-Layer Doping on the Stability of a-Si:H Solar Cells

Research output: Contribution to conference › Paper

Original language	American English
Pages	887-892
Number of pages	6
State	Published - 1992
Event	Amorphous Silicon Technology - 1992: Materials Research Society Symposium - San Francisco, California Duration: 27 Apr 1992 → 1 May 1992

Conference

Conference	Amorphous Silicon Technology - 1992: Materials Research Society Symposium
City	San Francisco, California
Period	27/04/92 → 1/05/92

Bibliographical note

Work performed by University of Neuchatel, Neuchatel, Switzerland and University of Delaware, Newark, Delaware

NREL Publication Number

ACNR/CP-14625

Cite this

@conference{3c3beeec9a2d47f7acda08abb882142a,

title = "Effects of Low Level Graded I-Layer Doping on the Stability of a-Si:H Solar Cells",

author = "NREL",

note = "Work performed by University of Neuchatel, Neuchatel, Switzerland and University of Delaware, Newark, Delaware; Amorphous Silicon Technology - 1992: Materials Research Society Symposium ; Conference date: 27-04-1992 Through 01-05-1992",

year = "1992",

language = "American English",

pages = "887--892",

}

TY - CONF

T1 - Effects of Low Level Graded I-Layer Doping on the Stability of a-Si:H Solar Cells

AU - NREL, null

N1 - Work performed by University of Neuchatel, Neuchatel, Switzerland and University of Delaware, Newark, Delaware

PY - 1992

Y1 - 1992

M3 - Paper

SP - 887

EP - 892

T2 - Amorphous Silicon Technology - 1992: Materials Research Society Symposium

Y2 - 27 April 1992 through 1 May 1992

ER -