Effects of Low Temperature Annealing on the Transport Properties of Zinc Tin Nitride

Angela N. Fioretti, Eric S. Toberer, Andriy Zakutayev, Adele C. Tamboli

Research output: Contribution to conferencePaperpeer-review

8 Scopus Citations


ZnSnN2 has recently garnered increasing interest as a potential solar absorber material due to its direct bandgap that is predicted to be tunable from 1.0-2.1 eV based on cation disorder. One important challenge to the further development of this material for photovoltaics (PV) is to reliably synthesize films with carrier density ≤1017 electrons cm-3. In this work, we perform a systematic annealing study on compositionally-graded Zn-Sn-N thin films to determine the effects on carrier density and transport of such post-growth treatment. We find that annealing up to 6 hr under an activated nitrogen atmosphere results in a reduction in carrier density by ∼80% for zinc-rich films, and by ∼50% for stoichiometric films. However, we also find that annealing reduces mobility as a function of increasing annealing time. This result suggests that initial film disorder hampers the benefits to film quality that should have been gained through annealing. This finding highlights that carefully managed initial growth conditions will be necessary to obtain PV-quality ZnSnN2 absorber films.

Original languageAmerican English
Number of pages5
StatePublished - 14 Dec 2015
Externally publishedYes
Event42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States
Duration: 14 Jun 201519 Jun 2015


Conference42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
Country/TerritoryUnited States
CityNew Orleans

Bibliographical note

Publisher Copyright:
© 2015 IEEE.

NREL Publication Number

  • NREL/CP-5J00-65797


  • Annealing
  • microsctructure
  • nitrogen
  • sputtering
  • thin films


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